Fabrication of thin-film organic memory elements

Research output: Contribution to conferenceConference AbstractScientific

Abstract

A flexible organic memory unit will be a key element when manufacturing future RFID circuits on flexible substrates. Although the research of memory devices using organic materials dates back almost 40 years, the performance of these devices has remained low when compared to their inorganic counterparts. The main problem limiting the application of these devices is that their operation tends to degrade in air and under stress of successive read-write cycles. Furthermore, the physical phenomena affecting their stability are many times unclear. In this study many different aspects related to the sample preparation were studied in order to identify which of them had an influence on the performance and stability of the devices. The test device structure consisted of two metal electrodes and an organic layer between them. As the organic film different polymer materials including block polymers, poly(3-hexyl thiophene) (P3HT), and polystyrenes were tested in various compositions. The film thickness varied from a few tens of nanometres to ~200 nm. During the work, different electrode materials, interface effects, film thickness, device area, substrate materials, impurity effects, and curing parameters etc. were studied. Results from the electrical characterisation showed that electrical switching took place in all of the tested materials but not in all fabrication parameter combinations. One of the most important aspects in the sample preparation affecting the device performance was the purity of processing environment. The importance of the dust particles in constituting conducting paths to charge carriers and thereby enabling electrical conductivity was identified. In addition to the purity of the processing environment the interface effects played a major role in the operation of the devices.
Original languageEnglish
Publication statusPublished - 2008
MoE publication typeNot Eligible
Event1st International Symposium on Flexible Organic Electronics, IS-FOE08 - Kassandra Peninsula, Halkidiki, Greece
Duration: 10 Jul 200811 Jul 2008

Conference

Conference1st International Symposium on Flexible Organic Electronics, IS-FOE08
Abbreviated titleIS-FOE08
CountryGreece
CityHalkidiki
Period10/07/0811/07/08

Fingerprint

Data storage equipment
Fabrication
Thin films
Film thickness
Thiophenes
Electrodes
Polystyrenes
Substrates
Processing
Charge carriers
Radio frequency identification (RFID)
Polymer films
Particles (particulate matter)
Block copolymers
Dust
Curing
Metals
Impurities
Networks (circuits)
Air

Keywords

  • negative differential resistance
  • organic memory
  • organic thin films
  • electrical switching

Cite this

Solehmainen, K., Vilkman, M., Hassinen, T., & Sandberg, H. (2008). Fabrication of thin-film organic memory elements. Abstract from 1st International Symposium on Flexible Organic Electronics, IS-FOE08, Halkidiki, Greece.
Solehmainen, Kimmo ; Vilkman, Marja ; Hassinen, Tomi ; Sandberg, Henrik. / Fabrication of thin-film organic memory elements. Abstract from 1st International Symposium on Flexible Organic Electronics, IS-FOE08, Halkidiki, Greece.
@conference{9c1bc5e414574aa68e1fbbbf9e5c16eb,
title = "Fabrication of thin-film organic memory elements",
abstract = "A flexible organic memory unit will be a key element when manufacturing future RFID circuits on flexible substrates. Although the research of memory devices using organic materials dates back almost 40 years, the performance of these devices has remained low when compared to their inorganic counterparts. The main problem limiting the application of these devices is that their operation tends to degrade in air and under stress of successive read-write cycles. Furthermore, the physical phenomena affecting their stability are many times unclear. In this study many different aspects related to the sample preparation were studied in order to identify which of them had an influence on the performance and stability of the devices. The test device structure consisted of two metal electrodes and an organic layer between them. As the organic film different polymer materials including block polymers, poly(3-hexyl thiophene) (P3HT), and polystyrenes were tested in various compositions. The film thickness varied from a few tens of nanometres to ~200 nm. During the work, different electrode materials, interface effects, film thickness, device area, substrate materials, impurity effects, and curing parameters etc. were studied. Results from the electrical characterisation showed that electrical switching took place in all of the tested materials but not in all fabrication parameter combinations. One of the most important aspects in the sample preparation affecting the device performance was the purity of processing environment. The importance of the dust particles in constituting conducting paths to charge carriers and thereby enabling electrical conductivity was identified. In addition to the purity of the processing environment the interface effects played a major role in the operation of the devices.",
keywords = "negative differential resistance, organic memory, organic thin films, electrical switching",
author = "Kimmo Solehmainen and Marja Vilkman and Tomi Hassinen and Henrik Sandberg",
year = "2008",
language = "English",
note = "1st International Symposium on Flexible Organic Electronics, IS-FOE08, IS-FOE08 ; Conference date: 10-07-2008 Through 11-07-2008",

}

Solehmainen, K, Vilkman, M, Hassinen, T & Sandberg, H 2008, 'Fabrication of thin-film organic memory elements', 1st International Symposium on Flexible Organic Electronics, IS-FOE08, Halkidiki, Greece, 10/07/08 - 11/07/08.

Fabrication of thin-film organic memory elements. / Solehmainen, Kimmo; Vilkman, Marja; Hassinen, Tomi; Sandberg, Henrik.

2008. Abstract from 1st International Symposium on Flexible Organic Electronics, IS-FOE08, Halkidiki, Greece.

Research output: Contribution to conferenceConference AbstractScientific

TY - CONF

T1 - Fabrication of thin-film organic memory elements

AU - Solehmainen, Kimmo

AU - Vilkman, Marja

AU - Hassinen, Tomi

AU - Sandberg, Henrik

PY - 2008

Y1 - 2008

N2 - A flexible organic memory unit will be a key element when manufacturing future RFID circuits on flexible substrates. Although the research of memory devices using organic materials dates back almost 40 years, the performance of these devices has remained low when compared to their inorganic counterparts. The main problem limiting the application of these devices is that their operation tends to degrade in air and under stress of successive read-write cycles. Furthermore, the physical phenomena affecting their stability are many times unclear. In this study many different aspects related to the sample preparation were studied in order to identify which of them had an influence on the performance and stability of the devices. The test device structure consisted of two metal electrodes and an organic layer between them. As the organic film different polymer materials including block polymers, poly(3-hexyl thiophene) (P3HT), and polystyrenes were tested in various compositions. The film thickness varied from a few tens of nanometres to ~200 nm. During the work, different electrode materials, interface effects, film thickness, device area, substrate materials, impurity effects, and curing parameters etc. were studied. Results from the electrical characterisation showed that electrical switching took place in all of the tested materials but not in all fabrication parameter combinations. One of the most important aspects in the sample preparation affecting the device performance was the purity of processing environment. The importance of the dust particles in constituting conducting paths to charge carriers and thereby enabling electrical conductivity was identified. In addition to the purity of the processing environment the interface effects played a major role in the operation of the devices.

AB - A flexible organic memory unit will be a key element when manufacturing future RFID circuits on flexible substrates. Although the research of memory devices using organic materials dates back almost 40 years, the performance of these devices has remained low when compared to their inorganic counterparts. The main problem limiting the application of these devices is that their operation tends to degrade in air and under stress of successive read-write cycles. Furthermore, the physical phenomena affecting their stability are many times unclear. In this study many different aspects related to the sample preparation were studied in order to identify which of them had an influence on the performance and stability of the devices. The test device structure consisted of two metal electrodes and an organic layer between them. As the organic film different polymer materials including block polymers, poly(3-hexyl thiophene) (P3HT), and polystyrenes were tested in various compositions. The film thickness varied from a few tens of nanometres to ~200 nm. During the work, different electrode materials, interface effects, film thickness, device area, substrate materials, impurity effects, and curing parameters etc. were studied. Results from the electrical characterisation showed that electrical switching took place in all of the tested materials but not in all fabrication parameter combinations. One of the most important aspects in the sample preparation affecting the device performance was the purity of processing environment. The importance of the dust particles in constituting conducting paths to charge carriers and thereby enabling electrical conductivity was identified. In addition to the purity of the processing environment the interface effects played a major role in the operation of the devices.

KW - negative differential resistance

KW - organic memory

KW - organic thin films

KW - electrical switching

M3 - Conference Abstract

ER -

Solehmainen K, Vilkman M, Hassinen T, Sandberg H. Fabrication of thin-film organic memory elements. 2008. Abstract from 1st International Symposium on Flexible Organic Electronics, IS-FOE08, Halkidiki, Greece.