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Fabrication of thin-film organic memory elements
Kimmo Solehmainen
, Marja Vilkman
, Tomi Hassinen
,
Henrik Sandberg
Research output
:
Contribution to conference
›
Conference Abstract
›
Scientific
Overview
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Keyphrases
Block Polymer
50%
Charge Carriers
50%
Conducting Path
50%
Curing Parameters
50%
Device Area
50%
Device Performance
50%
Device Structure
50%
Dust Particles
50%
Effect Parameter
50%
Electrical Characterization
50%
Electrical Conductivity
50%
Electrical Switching
50%
Electrode Materials
50%
Fabrication Parameters
50%
Film Thickness
100%
Flexible Substrate
50%
Impurity Effect
50%
Interface Effect
100%
Material Impurities
50%
Material Interfaces
50%
Memory Device
50%
Memory Element
100%
Memory Unit
50%
Metal Electrode
50%
Nanometre
50%
Organic Films
50%
Organic Layer
50%
Organic Matter
50%
Organic Memory
100%
Parameter Combination
50%
Physical Phenomena
50%
Poly(3-hexylthiophene) (P3HT)
50%
Polymer Materials
50%
Polystyrene
50%
Processing Environment
100%
Sample Preparation
100%
Substrate Material
50%
Successive Read
50%
Write Cycle
50%
Engineering
Area Substrate
100%
Charge Carrier
100%
Device Performance
100%
Device Structure
100%
Electrical Conductivity
100%
Flexible Substrate
100%
Main Problem
100%
Material Interface
100%
Nanometre
100%
Organic Layer
100%
Organic Material
100%
Physical Phenomena
100%
Polymer Material
100%
Substrate Material
100%
Thin Films
100%
INIS
air
14%
applications
14%
charge carriers
14%
comparative evaluations
14%
curing
14%
devices
100%
dusts
14%
electrical conductivity
14%
electrodes
28%
environment
28%
fabrication
100%
films
42%
impurities
14%
interfaces
28%
layers
14%
manufacturing
14%
memory devices
14%
metals
14%
operation
28%
organic matter
14%
particles
14%
performance
42%
polymers
28%
polystyrene
14%
processing
28%
purity
28%
sample preparation
28%
stability
28%
substrates
28%
thickness
28%
thin films
100%
thiophene
14%
units
14%
Material Science
Block Copolymer
50%
Charge Carrier
50%
Dust Particle
50%
Electrical Conductivity
50%
Electronic Circuit
50%
Film
50%
Film Thickness
100%
Interface (Material)
50%
Polystyrene
50%
Thin Films
100%
Chemical Engineering
Block Copolymer
25%
Film
100%
Polystyrene
25%
Thiophene
25%