Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

M. Hannula; K. Lahtonen; H. Ali-Löytty; A. A. Zakharov; T. Isotalo; J. Saari; M. Valden

doi:10.1016/j.scriptamat.2016.03.016

Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

M. Hannula
, K. Lahtonen
, H. Ali-Löytty
, A. A. Zakharov
, T. Isotalo
, J. Saari
, M. Valden^*

^*Corresponding author for this work

Not published at VTT

Tampere University
Lund University

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO₂ grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO₂ to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO₂ reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Scripta Materialia
Volume	119
DOIs	https://doi.org/10.1016/j.scriptamat.2016.03.016
Publication status	Published - 1 Jul 2016
MoE publication type	A1 Journal article-refereed

Funding

We also acknowledge financial support by the Academy of Finland (decision numbers 141481 and 286713 ) and by KAUTE Foundation ( 201500457 ).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Atomic layer deposition (ALD)
Semiconductors
Surface modification
Transition metal silicides
X-ray photoelectron spectroscopy (XPS)

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10.1016/j.scriptamat.2016.03.016

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title = "Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications",

abstract = "We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.",

keywords = "Atomic layer deposition (ALD), Semiconductors, Surface modification, Transition metal silicides, X-ray photoelectron spectroscopy (XPS)",

author = "M. Hannula and K. Lahtonen and H. Ali-L{\"o}ytty and Zakharov, \{A. A.\} and T. Isotalo and J. Saari and M. Valden",

year = "2016",

month = jul,

day = "1",

doi = "10.1016/j.scriptamat.2016.03.016",

language = "English",

volume = "119",

pages = "76--81",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier",

}

TY - JOUR

T1 - Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

AU - Hannula, M.

AU - Lahtonen, K.

AU - Ali-Löytty, H.

AU - Zakharov, A. A.

AU - Isotalo, T.

AU - Saari, J.

AU - Valden, M.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

AB - We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

KW - Atomic layer deposition (ALD)

KW - Semiconductors

KW - Surface modification

KW - Transition metal silicides

KW - X-ray photoelectron spectroscopy (XPS)

UR - https://www.scopus.com/pages/publications/84963553679

U2 - 10.1016/j.scriptamat.2016.03.016

DO - 10.1016/j.scriptamat.2016.03.016

M3 - Article

AN - SCOPUS:84963553679

SN - 1359-6462

VL - 119

SP - 76

EP - 81

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Abstract

Funding

UN SDGs

Keywords

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