Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen, T. Tuomi, V. Airaksinen, Juha Sinkkonen, E. Siren

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.
Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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Gallium Arsenide
Nanostructures
Fabrication
Epitaxy
Gold
fabrication
Mask
masks
gold
Quantum Well
Etching
Quantum Dots
Lithography
vapor phase epitaxy
molecular beam epitaxy
lithography
Metals
quantum dots
etching
quantum wells

Cite this

Ahopelto, J., Lipsanen, H., Sopanen, M., Koljonen, T., Tuomi, T., Airaksinen, V., ... Siren, E. (1994). Fabrication on nanostructures using MBE and MOVPE. Physica Scripta, 1994(T54), 241-243. https://doi.org/10.1088/0031-8949/1994/T54/059
Ahopelto, Jouni ; Lipsanen, Harri ; Sopanen, Markku ; Koljonen, Timo ; Tuomi, T. ; Airaksinen, V. ; Sinkkonen, Juha ; Siren, E. / Fabrication on nanostructures using MBE and MOVPE. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 241-243.
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abstract = "Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.",
author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen and Timo Koljonen and T. Tuomi and V. Airaksinen and Juha Sinkkonen and E. Siren",
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Ahopelto, J, Lipsanen, H, Sopanen, M, Koljonen, T, Tuomi, T, Airaksinen, V, Sinkkonen, J & Siren, E 1994, 'Fabrication on nanostructures using MBE and MOVPE', Physica Scripta, vol. 1994, no. T54, pp. 241-243. https://doi.org/10.1088/0031-8949/1994/T54/059

Fabrication on nanostructures using MBE and MOVPE. / Ahopelto, Jouni; Lipsanen, Harri; Sopanen, Markku; Koljonen, Timo; Tuomi, T.; Airaksinen, V.; Sinkkonen, Juha; Siren, E.

In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 241-243.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication on nanostructures using MBE and MOVPE

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Koljonen, Timo

AU - Tuomi, T.

AU - Airaksinen, V.

AU - Sinkkonen, Juha

AU - Siren, E.

PY - 1994

Y1 - 1994

N2 - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

AB - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

U2 - 10.1088/0031-8949/1994/T54/059

DO - 10.1088/0031-8949/1994/T54/059

M3 - Article

VL - 1994

SP - 241

EP - 243

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T54

ER -

Ahopelto J, Lipsanen H, Sopanen M, Koljonen T, Tuomi T, Airaksinen V et al. Fabrication on nanostructures using MBE and MOVPE. Physica Scripta. 1994;1994(T54):241-243. https://doi.org/10.1088/0031-8949/1994/T54/059