Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen, T. Tuomi, V. Airaksinen, Juha Sinkkonen, E. Siren

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.
    Original languageEnglish
    Pages (from-to)241-243
    Number of pages3
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Gallium Arsenide
    Nanostructures
    Fabrication
    Epitaxy
    Gold
    fabrication
    Mask
    masks
    gold
    Quantum Well
    Etching
    Quantum Dots
    Lithography
    vapor phase epitaxy
    molecular beam epitaxy
    lithography
    Metals
    quantum dots
    etching
    quantum wells

    Cite this

    Ahopelto, J., Lipsanen, H., Sopanen, M., Koljonen, T., Tuomi, T., Airaksinen, V., ... Siren, E. (1994). Fabrication on nanostructures using MBE and MOVPE. Physica Scripta, 1994(T54), 241-243. https://doi.org/10.1088/0031-8949/1994/T54/059
    Ahopelto, Jouni ; Lipsanen, Harri ; Sopanen, Markku ; Koljonen, Timo ; Tuomi, T. ; Airaksinen, V. ; Sinkkonen, Juha ; Siren, E. / Fabrication on nanostructures using MBE and MOVPE. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 241-243.
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    title = "Fabrication on nanostructures using MBE and MOVPE",
    abstract = "Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.",
    author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen and Timo Koljonen and T. Tuomi and V. Airaksinen and Juha Sinkkonen and E. Siren",
    year = "1994",
    doi = "10.1088/0031-8949/1994/T54/059",
    language = "English",
    volume = "1994",
    pages = "241--243",
    journal = "Physica Scripta",
    issn = "0031-8949",
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    }

    Ahopelto, J, Lipsanen, H, Sopanen, M, Koljonen, T, Tuomi, T, Airaksinen, V, Sinkkonen, J & Siren, E 1994, 'Fabrication on nanostructures using MBE and MOVPE', Physica Scripta, vol. 1994, no. T54, pp. 241-243. https://doi.org/10.1088/0031-8949/1994/T54/059

    Fabrication on nanostructures using MBE and MOVPE. / Ahopelto, Jouni; Lipsanen, Harri; Sopanen, Markku; Koljonen, Timo; Tuomi, T.; Airaksinen, V.; Sinkkonen, Juha; Siren, E.

    In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 241-243.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fabrication on nanostructures using MBE and MOVPE

    AU - Ahopelto, Jouni

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Koljonen, Timo

    AU - Tuomi, T.

    AU - Airaksinen, V.

    AU - Sinkkonen, Juha

    AU - Siren, E.

    PY - 1994

    Y1 - 1994

    N2 - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

    AB - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

    U2 - 10.1088/0031-8949/1994/T54/059

    DO - 10.1088/0031-8949/1994/T54/059

    M3 - Article

    VL - 1994

    SP - 241

    EP - 243

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T54

    ER -

    Ahopelto J, Lipsanen H, Sopanen M, Koljonen T, Tuomi T, Airaksinen V et al. Fabrication on nanostructures using MBE and MOVPE. Physica Scripta. 1994;1994(T54):241-243. https://doi.org/10.1088/0031-8949/1994/T54/059