Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto; Harri Lipsanen; Markku Sopanen; Timo Koljonen; T. Tuomi; V. Airaksinen; Juha Sinkkonen; E. Siren

doi:10.1088/0031-8949/1994/T54/059

Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen, T. Tuomi, V. Airaksinen, Juha Sinkkonen, E. Siren

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

Original language	English
Pages (from-to)	241-243
Number of pages	3
Journal	Physica Scripta
Volume	1994
Issue number	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/059
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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10.1088/0031-8949/1994/T54/059

Cite this

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title = "Fabrication on nanostructures using MBE and MOVPE",

abstract = "Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.",

author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen and Timo Koljonen and T. Tuomi and V. Airaksinen and Juha Sinkkonen and E. Siren",

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T1 - Fabrication on nanostructures using MBE and MOVPE

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Koljonen, Timo

AU - Tuomi, T.

AU - Airaksinen, V.

AU - Sinkkonen, Juha

AU - Siren, E.

PY - 1994

Y1 - 1994

N2 - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

AB - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

U2 - 10.1088/0031-8949/1994/T54/059

DO - 10.1088/0031-8949/1994/T54/059

M3 - Article

SN - 0281-1847

VL - 1994

SP - 241

EP - 243

JO - Physica Scripta

JF - Physica Scripta

IS - T54

ER -

Fabrication on nanostructures using MBE and MOVPE

Abstract

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