Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen, T. Tuomi, V. Airaksinen, Juha Sinkkonen, E. Siren

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    Abstract

    Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.
    Original languageEnglish
    Pages (from-to)241-243
    Number of pages3
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Ahopelto, J., Lipsanen, H., Sopanen, M., Koljonen, T., Tuomi, T., Airaksinen, V., Sinkkonen, J., & Siren, E. (1994). Fabrication on nanostructures using MBE and MOVPE. Physica Scripta, 1994(T54), 241-243. https://doi.org/10.1088/0031-8949/1994/T54/059