Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen, Timo Koljonen, T. Tuomi, V. Airaksinen, Juha Sinkkonen, E. Siren

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)


    Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.
    Original languageEnglish
    Pages (from-to)241-243
    Number of pages3
    JournalPhysica Scripta
    Issue numberT54
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed


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