Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto; Harri Lipsanen; Markku Sopanen; Timo Koljonen; T. Tuomi; V. Airaksinen; Juha Sinkkonen; E. Siren

doi:10.1088/0031-8949/1994/T54/059

Fabrication on nanostructures using MBE and MOVPE

Jouni Ahopelto
, Harri Lipsanen
, Markku Sopanen
, Timo Koljonen
, T. Tuomi
, V. Airaksinen
, Juha Sinkkonen
, E. Siren

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

Original language	English
Pages (from-to)	241-243
Number of pages	3
Journal	Physica Scripta
Volume	1994
Issue number	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/059
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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10.1088/0031-8949/1994/T54/059

Cite this

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title = "Fabrication on nanostructures using MBE and MOVPE",

abstract = "Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.",

author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen and Timo Koljonen and T. Tuomi and V. Airaksinen and Juha Sinkkonen and E. Siren",

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TY - JOUR

T1 - Fabrication on nanostructures using MBE and MOVPE

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Koljonen, Timo

AU - Tuomi, T.

AU - Airaksinen, V.

AU - Sinkkonen, Juha

AU - Siren, E.

PY - 1994

Y1 - 1994

N2 - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

AB - Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

U2 - 10.1088/0031-8949/1994/T54/059

DO - 10.1088/0031-8949/1994/T54/059

M3 - Article

SN - 0281-1847

VL - 1994

SP - 241

EP - 243

JO - Physica Scripta

JF - Physica Scripta

IS - T54

ER -

Fabrication on nanostructures using MBE and MOVPE

Abstract

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