Fabrication process for RSFQ/qubit systems

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    8 Citations (Scopus)

    Abstract

    We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.
    Original languageEnglish
    Pages (from-to)952-954
    JournalIEEE Transactions on Applied Superconductivity
    Volume17
    Issue number2
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Fabrication
    • Niobium
    • Qubit
    • RSFQ

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