Fabrication process for RSFQ/qubit systems

Leif Grönberg, Juha Hassel, Panu Helistö, Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.
    Original languageEnglish
    Pages (from-to)952-954
    JournalIEEE Transactions on Applied Superconductivity
    Volume17
    Issue number2
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Temperature measurement
    Fabrication
    fabrication
    Networks (circuits)
    temperature measurement
    critical current
    wafers
    current density
    Temperature
    room temperature
    temperature

    Keywords

    • Fabrication
    • Niobium
    • Qubit
    • RSFQ

    Cite this

    Grönberg, Leif ; Hassel, Juha ; Helistö, Panu ; Ylilammi, Markku. / Fabrication process for RSFQ/qubit systems. In: IEEE Transactions on Applied Superconductivity. 2007 ; Vol. 17, No. 2. pp. 952-954.
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    abstract = "We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.",
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    author = "Leif Gr{\"o}nberg and Juha Hassel and Panu Helist{\"o} and Markku Ylilammi",
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    language = "English",
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    pages = "952--954",
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    Fabrication process for RSFQ/qubit systems. / Grönberg, Leif; Hassel, Juha; Helistö, Panu; Ylilammi, Markku.

    In: IEEE Transactions on Applied Superconductivity, Vol. 17, No. 2, 2007, p. 952-954.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fabrication process for RSFQ/qubit systems

    AU - Grönberg, Leif

    AU - Hassel, Juha

    AU - Helistö, Panu

    AU - Ylilammi, Markku

    PY - 2007

    Y1 - 2007

    N2 - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

    AB - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

    KW - Fabrication

    KW - Niobium

    KW - Qubit

    KW - RSFQ

    U2 - 10.1109/TASC.2007.897721

    DO - 10.1109/TASC.2007.897721

    M3 - Article

    VL - 17

    SP - 952

    EP - 954

    JO - IEEE Transactions on Applied Superconductivity

    JF - IEEE Transactions on Applied Superconductivity

    SN - 1051-8223

    IS - 2

    ER -