Fabrication process for RSFQ/qubit systems

Leif Grönberg, Juha Hassel, Panu Helistö, Markku Ylilammi

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.
Original languageEnglish
Pages (from-to)952-954
JournalIEEE Transactions on Applied Superconductivity
Volume17
Issue number2
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

Temperature measurement
Fabrication
fabrication
Networks (circuits)
temperature measurement
critical current
wafers
current density
Temperature
room temperature
temperature

Keywords

  • Fabrication
  • Niobium
  • Qubit
  • RSFQ

Cite this

Grönberg, Leif ; Hassel, Juha ; Helistö, Panu ; Ylilammi, Markku. / Fabrication process for RSFQ/qubit systems. In: IEEE Transactions on Applied Superconductivity. 2007 ; Vol. 17, No. 2. pp. 952-954.
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Fabrication process for RSFQ/qubit systems. / Grönberg, Leif; Hassel, Juha; Helistö, Panu; Ylilammi, Markku.

In: IEEE Transactions on Applied Superconductivity, Vol. 17, No. 2, 2007, p. 952-954.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fabrication process for RSFQ/qubit systems

AU - Grönberg, Leif

AU - Hassel, Juha

AU - Helistö, Panu

AU - Ylilammi, Markku

PY - 2007

Y1 - 2007

N2 - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

AB - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

KW - Fabrication

KW - Niobium

KW - Qubit

KW - RSFQ

U2 - 10.1109/TASC.2007.897721

DO - 10.1109/TASC.2007.897721

M3 - Article

VL - 17

SP - 952

EP - 954

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2

ER -