Fabrication process for RSFQ/qubit systems

Leif Grönberg; Juha Hassel; Panu Helistö; Markku Ylilammi

doi:10.1109/TASC.2007.897721

Fabrication process for RSFQ/qubit systems

Leif Grönberg
, Juha Hassel
, Panu Helistö
, Markku Ylilammi

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

Original language	English
Pages (from-to)	952-954
Journal	IEEE Transactions on Applied Superconductivity
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/TASC.2007.897721
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Keywords

Fabrication
Niobium
Qubit
RSFQ

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10.1109/TASC.2007.897721

Cite this

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abstract = "We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.",

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AU - Hassel, Juha

AU - Helistö, Panu

AU - Ylilammi, Markku

PY - 2007

Y1 - 2007

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AB - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.

KW - Fabrication

KW - Niobium

KW - Qubit

KW - RSFQ

U2 - 10.1109/TASC.2007.897721

DO - 10.1109/TASC.2007.897721

M3 - Article

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VL - 17

SP - 952

EP - 954

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

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ER -

Fabrication process for RSFQ/qubit systems

Abstract

Keywords

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