Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 8774-8782 |
| Number of pages | 9 |
| Journal | ACS applied materials & interfaces |
| Volume | 9 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 15 Mar 2017 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- inkjet printing
- low-temperature annealing
- metal oxide
- plastic substrate
- printed transistor
- thin-film transistor
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Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate. / Leppäniemi, Jaakko; Eiroma, Kim; Majumdar, Himandri; Alastalo, Ari.
In: ACS applied materials & interfaces, Vol. 9, No. 10, 15.03.2017, p. 8774-8782.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate
AU - Leppäniemi, Jaakko
AU - Eiroma, Kim
AU - Majumdar, Himandri
AU - Alastalo, Ari
PY - 2017/3/15
Y1 - 2017/3/15
N2 - The inkjet-printing process of precursor solutions containing In nitrate dissolved in 2-methoxyethanol is optimized using ethylene glycol as a cosolvent that allows the stabilization of the droplet formation, leading to a robust, repeatable printing process. The inkjet-printed precursor films are then converted to In2O3 semiconductors at flexible-substrate-compatible low temperatures (150-200 °C) using combined far-ultraviolet (FUV) exposure at ~160 nm and thermal treatment. The compositional nature of the precursor-to-metal oxide conversion is studied using grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy that indicate that amorphous, high density (up to 5.87 g/cm3), and low impurity In2O3 films can be obtained using the combined annealing technique. Prolonged annealing (180 min) at 150 °C yields enhancement-mode TFTs with saturation mobility of 4.3 cm2/(Vs) and ~1 cm2/(Vs) on rigid Si/SiO2 and flexible plastic PEN substrates, respectively. This paves the way for manufacturing relatively high-performance, printed metal-oxide TFT arrays on cheap, flexible substrate for commercial applications.
AB - The inkjet-printing process of precursor solutions containing In nitrate dissolved in 2-methoxyethanol is optimized using ethylene glycol as a cosolvent that allows the stabilization of the droplet formation, leading to a robust, repeatable printing process. The inkjet-printed precursor films are then converted to In2O3 semiconductors at flexible-substrate-compatible low temperatures (150-200 °C) using combined far-ultraviolet (FUV) exposure at ~160 nm and thermal treatment. The compositional nature of the precursor-to-metal oxide conversion is studied using grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy that indicate that amorphous, high density (up to 5.87 g/cm3), and low impurity In2O3 films can be obtained using the combined annealing technique. Prolonged annealing (180 min) at 150 °C yields enhancement-mode TFTs with saturation mobility of 4.3 cm2/(Vs) and ~1 cm2/(Vs) on rigid Si/SiO2 and flexible plastic PEN substrates, respectively. This paves the way for manufacturing relatively high-performance, printed metal-oxide TFT arrays on cheap, flexible substrate for commercial applications.
KW - inkjet printing
KW - low-temperature annealing
KW - metal oxide
KW - plastic substrate
KW - printed transistor
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=85015716108&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b14654
DO - 10.1021/acsami.6b14654
M3 - Article
VL - 9
SP - 8774
EP - 8782
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 10
ER -