Feasibility of a cryogenic SiGe amplifier at 4 K

Markku Åberg, Jan Saijets

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.
    Original languageEnglish
    Title of host publicationProceedings of the 31st Norchip Conference
    Place of PublicationCopenhagen, Danmark
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages4
    ISBN (Print)978-1-4799-1646-7, 978-1-4799-1647-4
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    Event31st Norchip Conference - Vilna, Lithuania
    Duration: 11 Nov 201312 Nov 2013

    Conference

    Conference31st Norchip Conference
    Abbreviated titleNORCHIP 2013
    CountryLithuania
    CityVilna
    Period11/11/1312/11/13

    Fingerprint

    cryogenics
    amplifiers
    bandwidth
    cryogenic temperature
    cascades
    topology
    simulation
    temperature

    Keywords

    • SiGe
    • integrated circuit
    • amplifier
    • cryogenic

    Cite this

    Åberg, M., & Saijets, J. (2013). Feasibility of a cryogenic SiGe amplifier at 4 K. In Proceedings of the 31st Norchip Conference Copenhagen, Danmark: IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/NORCHIP.2013.6702011
    Åberg, Markku ; Saijets, Jan. / Feasibility of a cryogenic SiGe amplifier at 4 K. Proceedings of the 31st Norchip Conference. Copenhagen, Danmark : IEEE Institute of Electrical and Electronic Engineers , 2013.
    @inproceedings{9fbdf145bbc44d9d81980aea87c66ce5,
    title = "Feasibility of a cryogenic SiGe amplifier at 4 K",
    abstract = "The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.",
    keywords = "SiGe, integrated circuit, amplifier, cryogenic",
    author = "Markku {\AA}berg and Jan Saijets",
    note = "Project code: 42243",
    year = "2013",
    doi = "10.1109/NORCHIP.2013.6702011",
    language = "English",
    isbn = "978-1-4799-1646-7",
    booktitle = "Proceedings of the 31st Norchip Conference",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Åberg, M & Saijets, J 2013, Feasibility of a cryogenic SiGe amplifier at 4 K. in Proceedings of the 31st Norchip Conference. IEEE Institute of Electrical and Electronic Engineers , Copenhagen, Danmark, 31st Norchip Conference, Vilna, Lithuania, 11/11/13. https://doi.org/10.1109/NORCHIP.2013.6702011

    Feasibility of a cryogenic SiGe amplifier at 4 K. / Åberg, Markku; Saijets, Jan.

    Proceedings of the 31st Norchip Conference. Copenhagen, Danmark : IEEE Institute of Electrical and Electronic Engineers , 2013.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Feasibility of a cryogenic SiGe amplifier at 4 K

    AU - Åberg, Markku

    AU - Saijets, Jan

    N1 - Project code: 42243

    PY - 2013

    Y1 - 2013

    N2 - The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

    AB - The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

    KW - SiGe

    KW - integrated circuit

    KW - amplifier

    KW - cryogenic

    U2 - 10.1109/NORCHIP.2013.6702011

    DO - 10.1109/NORCHIP.2013.6702011

    M3 - Conference article in proceedings

    SN - 978-1-4799-1646-7

    SN - 978-1-4799-1647-4

    BT - Proceedings of the 31st Norchip Conference

    PB - IEEE Institute of Electrical and Electronic Engineers

    CY - Copenhagen, Danmark

    ER -

    Åberg M, Saijets J. Feasibility of a cryogenic SiGe amplifier at 4 K. In Proceedings of the 31st Norchip Conference. Copenhagen, Danmark: IEEE Institute of Electrical and Electronic Engineers . 2013 https://doi.org/10.1109/NORCHIP.2013.6702011