Feasibility of a cryogenic SiGe amplifier at 4 K

Markku Åberg, Jan Saijets

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.
Original languageEnglish
Title of host publicationProceedings of the 31st Norchip Conference
Place of PublicationCopenhagen, Danmark
PublisherInstitute of Electrical and Electronic Engineers IEEE
Number of pages4
ISBN (Print)978-1-4799-1646-7, 978-1-4799-1647-4
DOIs
Publication statusPublished - 2013
MoE publication typeNot Eligible
Event31st Norchip Conference - Vilna, Lithuania
Duration: 11 Nov 201312 Nov 2013

Conference

Conference31st Norchip Conference
Abbreviated titleNORCHIP 2013
CountryLithuania
CityVilna
Period11/11/1312/11/13

Fingerprint

cryogenics
amplifiers
bandwidth
cryogenic temperature
cascades
topology
simulation
temperature

Keywords

  • SiGe
  • integrated circuit
  • amplifier
  • cryogenic

Cite this

Åberg, M., & Saijets, J. (2013). Feasibility of a cryogenic SiGe amplifier at 4 K. In Proceedings of the 31st Norchip Conference Copenhagen, Danmark: Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/NORCHIP.2013.6702011
Åberg, Markku ; Saijets, Jan. / Feasibility of a cryogenic SiGe amplifier at 4 K. Proceedings of the 31st Norchip Conference. Copenhagen, Danmark : Institute of Electrical and Electronic Engineers IEEE, 2013.
@inproceedings{9fbdf145bbc44d9d81980aea87c66ce5,
title = "Feasibility of a cryogenic SiGe amplifier at 4 K",
abstract = "The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.",
keywords = "SiGe, integrated circuit, amplifier, cryogenic",
author = "Markku {\AA}berg and Jan Saijets",
note = "Project code: 42243",
year = "2013",
doi = "10.1109/NORCHIP.2013.6702011",
language = "English",
isbn = "978-1-4799-1646-7",
booktitle = "Proceedings of the 31st Norchip Conference",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Åberg, M & Saijets, J 2013, Feasibility of a cryogenic SiGe amplifier at 4 K. in Proceedings of the 31st Norchip Conference. Institute of Electrical and Electronic Engineers IEEE, Copenhagen, Danmark, 31st Norchip Conference, Vilna, Lithuania, 11/11/13. https://doi.org/10.1109/NORCHIP.2013.6702011

Feasibility of a cryogenic SiGe amplifier at 4 K. / Åberg, Markku; Saijets, Jan.

Proceedings of the 31st Norchip Conference. Copenhagen, Danmark : Institute of Electrical and Electronic Engineers IEEE, 2013.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Feasibility of a cryogenic SiGe amplifier at 4 K

AU - Åberg, Markku

AU - Saijets, Jan

N1 - Project code: 42243

PY - 2013

Y1 - 2013

N2 - The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

AB - The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

KW - SiGe

KW - integrated circuit

KW - amplifier

KW - cryogenic

U2 - 10.1109/NORCHIP.2013.6702011

DO - 10.1109/NORCHIP.2013.6702011

M3 - Conference article in proceedings

SN - 978-1-4799-1646-7

SN - 978-1-4799-1647-4

BT - Proceedings of the 31st Norchip Conference

PB - Institute of Electrical and Electronic Engineers IEEE

CY - Copenhagen, Danmark

ER -

Åberg M, Saijets J. Feasibility of a cryogenic SiGe amplifier at 4 K. In Proceedings of the 31st Norchip Conference. Copenhagen, Danmark: Institute of Electrical and Electronic Engineers IEEE. 2013 https://doi.org/10.1109/NORCHIP.2013.6702011