Feasibility of a cryogenic SiGe amplifier at 4 K

Markku Åberg; Jan Saijets

doi:10.1109/NORCHIP.2013.6702011

Feasibility of a cryogenic SiGe amplifier at 4 K

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

Original language	English
Title of host publication	Proceedings of the 31st Norchip Conference
Place of Publication	Copenhagen
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	4
ISBN (Print)	978-1-4799-1646-7, 978-1-4799-1647-4
DOIs	https://doi.org/10.1109/NORCHIP.2013.6702011
Publication status	Published - 2013
MoE publication type	A4 Article in a conference publication
Event	31st Norchip Conference - Vilna, Lithuania Duration: 11 Nov 2013 → 12 Nov 2013

Conference

Conference	31st Norchip Conference
Abbreviated title	NORCHIP 2013
Country/Territory	Lithuania
City	Vilna
Period	11/11/13 → 12/11/13

Keywords

SiGe
integrated circuit
amplifier
cryogenic

Access to Document

10.1109/NORCHIP.2013.6702011

Cite this

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title = "Feasibility of a cryogenic SiGe amplifier at 4 K",

abstract = "The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.",

keywords = "SiGe, integrated circuit, amplifier, cryogenic",

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AU - Åberg, Markku

AU - Saijets, Jan

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PY - 2013

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AB - The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.

KW - SiGe

KW - integrated circuit

KW - amplifier

KW - cryogenic

U2 - 10.1109/NORCHIP.2013.6702011

DO - 10.1109/NORCHIP.2013.6702011

M3 - Conference article in proceedings

SN - 978-1-4799-1646-7

SN - 978-1-4799-1647-4

BT - Proceedings of the 31st Norchip Conference

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Copenhagen

T2 - 31st Norchip Conference

Y2 - 11 November 2013 through 12 November 2013

ER -

Feasibility of a cryogenic SiGe amplifier at 4 K

Abstract

Conference

Keywords

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