Fermi-level dependet diffusion of ion-implanted arsenic in germanium

T. Ahlgren; Jari Likonen; Sari Lehto; E. Vainonen-Ahlgren; J. Keinonen

doi:10.1063/1.1395445

Fermi-level dependet diffusion of ion-implanted arsenic in germanium

T. Ahlgren, Jari Likonen, Sari Lehto, E. Vainonen-Ahlgren, J. Keinonen

Not published at VTT

University of Helsinki

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	The CAARI 2000
Subtitle of host publication	Sixteenth international conference on the application of accelerators in research and industry
Publisher	American Institute of Physics (AIP)
Pages	887-890
ISBN (Print)	978-0-7354-0015-3
DOIs	https://doi.org/10.1063/1.1395445
Publication status	Published - 2001
MoE publication type	A4 Article in a conference publication
Event	16th international conference on the application of accelerators in research and industry - Denton, United States Duration: 1 Nov 2000 → 5 Nov 2000

Publication series

Series	AIP Conference Proceedings
Number	1
Volume	576
ISSN	0094-243X

Conference

Conference	16th international conference on the application of accelerators in research and industry
Country/Territory	United States
City	Denton
Period	1/11/00 → 5/11/00

Access to Document

10.1063/1.1395445

Cite this

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title = "Fermi-level dependet diffusion of ion-implanted arsenic in germanium",

author = "T. Ahlgren and Jari Likonen and Sari Lehto and E. Vainonen-Ahlgren and J. Keinonen",

year = "2001",

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language = "English",

isbn = "978-0-7354-0015-3",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics (AIP)",

number = "1",

pages = "887--890",

booktitle = "The CAARI 2000",

address = "United States",

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Ahlgren, T, Likonen, J, Lehto, S, Vainonen-Ahlgren, E & Keinonen, J 2001, Fermi-level dependet diffusion of ion-implanted arsenic in germanium. in The CAARI 2000: Sixteenth international conference on the application of accelerators in research and industry. American Institute of Physics (AIP), AIP Conference Proceedings, no. 1, vol. 576, pp. 887-890, 16th international conference on the application of accelerators in research and industry, Denton, Texas, United States, 1/11/00. https://doi.org/10.1063/1.1395445

Fermi-level dependet diffusion of ion-implanted arsenic in germanium. / Ahlgren, T.; Likonen, Jari; Lehto, Sari et al.
The CAARI 2000: Sixteenth international conference on the application of accelerators in research and industry. American Institute of Physics (AIP), 2001. p. 887-890 (AIP Conference Proceedings; No. 1, Vol. 576).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Fermi-level dependet diffusion of ion-implanted arsenic in germanium

AU - Ahlgren, T.

AU - Likonen, Jari

AU - Lehto, Sari

AU - Vainonen-Ahlgren, E.

AU - Keinonen, J.

PY - 2001

Y1 - 2001

U2 - 10.1063/1.1395445

DO - 10.1063/1.1395445

M3 - Conference article in proceedings

SN - 978-0-7354-0015-3

T3 - AIP Conference Proceedings

SP - 887

EP - 890

BT - The CAARI 2000

PB - American Institute of Physics (AIP)

T2 - 16th international conference on the application of accelerators in research and industry

Y2 - 1 November 2000 through 5 November 2000

ER -

Ahlgren T, Likonen J, Lehto S, Vainonen-Ahlgren E, Keinonen J. Fermi-level dependet diffusion of ion-implanted arsenic in germanium. In The CAARI 2000: Sixteenth international conference on the application of accelerators in research and industry. American Institute of Physics (AIP). 2001. p. 887-890. (AIP Conference Proceedings; No. 1, Vol. 576). doi: 10.1063/1.1395445