Fermi-level dependet diffusion of ion-implanted arsenic in germanium

T. Ahlgren, Jari Likonen, Sari Lehto, E. Vainonen-Ahlgren, J. Keinonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Original languageEnglish
    Title of host publicationApplication of Accelarators in Research and Industry
    Subtitle of host publicationAIP Conference Proceedings
    Place of PublicationMelville, NY
    PublisherAmerican Institute of Physics AIP
    Pages887 - 890
    ISBN (Print)0-7354-0015-6
    DOIs
    Publication statusPublished - 2001
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event16th international conference on the application of accelerators in research and industry - Denton, United States
    Duration: 1 Nov 20005 Nov 2000

    Publication series

    SeriesAIP Conference Proceedings
    Volume576
    ISSN0094-243X

    Conference

    Conference16th international conference on the application of accelerators in research and industry
    CountryUnited States
    CityDenton
    Period1/11/005/11/00

    Cite this

    Ahlgren, T., Likonen, J., Lehto, S., Vainonen-Ahlgren, E., & Keinonen, J. (2001). Fermi-level dependet diffusion of ion-implanted arsenic in germanium. In Application of Accelarators in Research and Industry: AIP Conference Proceedings (pp. 887 - 890). American Institute of Physics AIP. AIP Conference Proceedings, Vol.. 576 https://doi.org/10.1063/1.1395445