Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature

Himadri S. Majumdar; Sayani Majumdar; Daniel Tobjork; Ronald Osterbacka

doi:10.1016/j.synthmet.2009.04.010

Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature

Himadri S. Majumdar (Corresponding Author), Sayani Majumdar, Daniel Tobjork, Ronald Osterbacka

Not published at VTT

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23 Citations (Scopus)

Abstract

In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.

Original language	English
Pages (from-to)	303-306
Journal	Synthetic Metals
Volume	160
Issue number	3-4
DOIs	https://doi.org/10.1016/j.synthmet.2009.04.010
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

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10.1016/j.synthmet.2009.04.010

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title = "Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature",

abstract = "In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.",

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T1 - Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature

AU - Majumdar, Himadri S.

AU - Majumdar, Sayani

AU - Tobjork, Daniel

AU - Osterbacka, Ronald

PY - 2010

Y1 - 2010

N2 - In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.

AB - In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.

U2 - 10.1016/j.synthmet.2009.04.010

DO - 10.1016/j.synthmet.2009.04.010

M3 - Article

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VL - 160

SP - 303

EP - 306

JO - Synthetic Metals

JF - Synthetic Metals

IS - 3-4

ER -

Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature

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