Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature

Himadri S. Majumdar (Corresponding Author), Sayani Majumdar, Daniel Tobjork, Ronald Osterbacka

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.
Original languageEnglish
Pages (from-to)303-306
JournalSynthetic Metals
Volume160
Issue number3-4
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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Ferromagnetism
Tin oxides
indium oxides
Indium
ferromagnetism
tin oxides
Electrodes
electrodes
room temperature
Magnetoresistance
Temperature
metal oxides
Metals
Oxides
indium tin oxide
Diodes
diodes
Impurities
impurities
Substrates

Cite this

Majumdar, Himadri S. ; Majumdar, Sayani ; Tobjork, Daniel ; Osterbacka, Ronald. / Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature. In: Synthetic Metals. 2010 ; Vol. 160, No. 3-4. pp. 303-306.
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Ferromagnetism in indium tin-oxide (ITO) electrodes at room temperature. / Majumdar, Himadri S. (Corresponding Author); Majumdar, Sayani; Tobjork, Daniel; Osterbacka, Ronald.

In: Synthetic Metals, Vol. 160, No. 3-4, 2010, p. 303-306.

Research output: Contribution to journalArticleScientificpeer-review

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AB - In this article we review the experimental observation of ferromagnetism in metal-oxide systems. This is relevant for the application of the most commonly used metal-oxide, indium tin-oxide (ITO), in organic electronic devices where organic magnetoresistance phenomenon has recently been observed. We provide experimental evidence of ferromagnetism in commercial ITO substrates and investigate the role of impurities in giving rise to such effects. Magnetoresistance have also been observed in organic diodes without any ITO contacts. However, it is important to take into account the intrinsic ferromagnetism in the ITO when interpreting the experimental data for devices with ITO. The possible limitations of using ITO are discussed in the article.

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