FIB Direct Write of ALD Al2O3 Mask for Silicon DRIE

C.J. Anthony; J. Bowen; Riikka Puurunen; J. Dekker; P.V. Prewett; M.C.L. Ward; J. Teng; E.L. Carter

FIB Direct Write of ALD Al2O3 Mask for Silicon DRIE

C.J. Anthony, J. Bowen, Riikka Puurunen, J. Dekker, P.V. Prewett, M.C.L. Ward, J. Teng, E.L. Carter

VTT Technical Research Centre of Finland

University of Birmingham

Research output: Contribution to conference › Conference article › Scientific › peer-review

Abstract

Here we report the mill rate of ALD Al2O3 and show that redeposition of milled material can render the maskless areas unetchable. Further we show that with the use of iodine enhanced etch gas that redeposition can be eliminated, making ALD Al2O3 a viable direct write mask for use in DRIE silicon etching.

Original language	English
Publication status	Published - 2008
MoE publication type	Not Eligible
Event	Eurosensors XXII, 22nd international conference EUROSENSORS - Dresden, Germany Duration: 7 Sept 2008 → 10 Sept 2008

Conference

Conference	Eurosensors XXII, 22nd international conference EUROSENSORS
Country/Territory	Germany
City	Dresden
Period	7/09/08 → 10/09/08

Keywords

Al2O3
FIB
Direct write

Cite this

@conference{2aae67a0589c45fbb9bac159ee25be55,

title = "FIB Direct Write of ALD Al2O3 Mask for Silicon DRIE",

abstract = "Here we report the mill rate of ALD Al2O3 and show that redeposition of milled material can render the maskless areas unetchable. Further we show that with the use of iodine enhanced etch gas that redeposition can be eliminated, making ALD Al2O3 a viable direct write mask for use in DRIE silicon etching.",

keywords = "Al2O3, FIB, Direct write",

author = "C.J. Anthony and J. Bowen and Riikka Puurunen and J. Dekker and P.V. Prewett and M.C.L. Ward and J. Teng and E.L. Carter",

year = "2008",

language = "English",

note = "Eurosensors XXII, 22nd international conference EUROSENSORS ; Conference date: 07-09-2008 Through 10-09-2008",

}

TY - CONF

T1 - FIB Direct Write of ALD Al2O3 Mask for Silicon DRIE

AU - Anthony, C.J.

AU - Bowen, J.

AU - Puurunen, Riikka

AU - Dekker, J.

AU - Prewett, P.V.

AU - Ward, M.C.L.

AU - Teng, J.

AU - Carter, E.L.

PY - 2008

Y1 - 2008

N2 - Here we report the mill rate of ALD Al2O3 and show that redeposition of milled material can render the maskless areas unetchable. Further we show that with the use of iodine enhanced etch gas that redeposition can be eliminated, making ALD Al2O3 a viable direct write mask for use in DRIE silicon etching.

AB - Here we report the mill rate of ALD Al2O3 and show that redeposition of milled material can render the maskless areas unetchable. Further we show that with the use of iodine enhanced etch gas that redeposition can be eliminated, making ALD Al2O3 a viable direct write mask for use in DRIE silicon etching.

KW - Al2O3

KW - FIB

KW - Direct write

M3 - Conference article

T2 - Eurosensors XXII, 22nd international conference EUROSENSORS

Y2 - 7 September 2008 through 10 September 2008

ER -

FIB Direct Write of ALD Al2O3 Mask for Silicon DRIE

Abstract

Conference

Keywords

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Cite this