Field-effect conduction in polyalkylthiophenes

Jari Paloheimo, Henrik Stubb, Pekka Kuivalainen, Paula Yli-Lahti

Research output: Contribution to journalArticleScientificpeer-review

58 Citations (Scopus)

Abstract

Semiconducting poly(3-alkylthiophenes) with butyl, hexyl, octyl and decyl side chains have been electrically characterized using a thin film field-effect transistor structure. The mobility of the p-type charge carriers depends on the side chain length. The mobility is also affected by additional impurities and defects.
Original languageEnglish
Pages (from-to)563 - 566
Number of pages4
JournalSynthetic Metals
Volume41
Issue number1-2
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Thin film transistors
Field effect transistors
Charge carriers
Chain length
Impurities
conduction
Defects
charge carriers
field effect transistors
impurities
defects
thin films

Cite this

Paloheimo, J., Stubb, H., Kuivalainen, P., & Yli-Lahti, P. (1991). Field-effect conduction in polyalkylthiophenes. Synthetic Metals, 41(1-2), 563 - 566. https://doi.org/10.1016/0379-6779(91)91133-U
Paloheimo, Jari ; Stubb, Henrik ; Kuivalainen, Pekka ; Yli-Lahti, Paula. / Field-effect conduction in polyalkylthiophenes. In: Synthetic Metals. 1991 ; Vol. 41, No. 1-2. pp. 563 - 566.
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Paloheimo, J, Stubb, H, Kuivalainen, P & Yli-Lahti, P 1991, 'Field-effect conduction in polyalkylthiophenes', Synthetic Metals, vol. 41, no. 1-2, pp. 563 - 566. https://doi.org/10.1016/0379-6779(91)91133-U

Field-effect conduction in polyalkylthiophenes. / Paloheimo, Jari; Stubb, Henrik; Kuivalainen, Pekka; Yli-Lahti, Paula.

In: Synthetic Metals, Vol. 41, No. 1-2, 1991, p. 563 - 566.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Field-effect conduction in polyalkylthiophenes

AU - Paloheimo, Jari

AU - Stubb, Henrik

AU - Kuivalainen, Pekka

AU - Yli-Lahti, Paula

N1 - Project code: PUO9021

PY - 1991

Y1 - 1991

N2 - Semiconducting poly(3-alkylthiophenes) with butyl, hexyl, octyl and decyl side chains have been electrically characterized using a thin film field-effect transistor structure. The mobility of the p-type charge carriers depends on the side chain length. The mobility is also affected by additional impurities and defects.

AB - Semiconducting poly(3-alkylthiophenes) with butyl, hexyl, octyl and decyl side chains have been electrically characterized using a thin film field-effect transistor structure. The mobility of the p-type charge carriers depends on the side chain length. The mobility is also affected by additional impurities and defects.

U2 - 10.1016/0379-6779(91)91133-U

DO - 10.1016/0379-6779(91)91133-U

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SP - 563

EP - 566

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

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Paloheimo J, Stubb H, Kuivalainen P, Yli-Lahti P. Field-effect conduction in polyalkylthiophenes. Synthetic Metals. 1991;41(1-2):563 - 566. https://doi.org/10.1016/0379-6779(91)91133-U