Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

Karsten Arts; Mikko Utriainen; Riikka L. Puurunen; Wilhelmus M.M. Kessels; Harm C.M. Knoops

doi:10.1021/acs.jpcc.9b08176

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂

Karsten Arts
, Mikko Utriainen
, Riikka L. Puurunen
, Wilhelmus M.M. Kessels^*
, Harm C.M. Knoops

^*Corresponding author for this work

Eindhoven University of Technology (TU/e)
Aalto University
Oxford Instruments Plasma Technology

Research output: Contribution to journal › Article › Scientific › peer-review

51 Citations (Scopus)

Abstract

Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO₂, TiO₂, Al₂O₃, and HfO₂ where a strong material dependence has been observed. Using extended plasma exposures, films of SiO₂ and TiO₂ penetrated extremely deep up to an aspect ratio (AR) of â&circ;900, and similar surface recombination probabilities of r = (6 ± 2) × 10^-5 and (7 ± 4) × 10^-5 were determined for these processes. Growth of Al₂O₃ and HfO₂ was conformal up to depths corresponding to ARs of â&circ;80 and â&circ;40, with r estimated at (1-10) × 10^-3 and (0.1-10) × 10^-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD. ©

Original language	English
Pages (from-to)	27030-27035
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	123
Issue number	44
DOIs	https://doi.org/10.1021/acs.jpcc.9b08176
Publication status	Published - 7 Nov 2019
MoE publication type	A1 Journal article-refereed

Funding

This work is part of the research program HTSM with Project No. 15352, which is (partly) financed by the Netherlands Organization for Scientific Research (NWO). PillarHall LHAR fabrication was carried out in the OtaNano research infrastructure. VTT acknowledges the financial support for developing the LHAR4 conformality test structure from Business Finland (National Innovation Funding Center of Finland, previously Tekes) through the PillarHall TUTL project.

Keywords

OtaNano

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10.1021/acs.jpcc.9b08176Licence: CC BY-NC-ND

Cite this

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title = "Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2",

abstract = "Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of {\^a}\&circ;900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of {\^a}\&circ;80 and {\^a}\&circ;40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD. {\textcopyright}",

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Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂. / Arts, Karsten; Utriainen, Mikko; Puurunen, Riikka L. et al.
In: Journal of Physical Chemistry C, Vol. 123, No. 44, 07.11.2019, p. 27030-27035.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

AU - Arts, Karsten

AU - Utriainen, Mikko

AU - Puurunen, Riikka L.

AU - Kessels, Wilhelmus M.M.

AU - Knoops, Harm C.M.

PY - 2019/11/7

Y1 - 2019/11/7

N2 - Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of â&circ;900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of â&circ;80 and â&circ;40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD. ©

AB - Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of â&circ;900, and similar surface recombination probabilities of r = (6 ± 2) × 10-5 and (7 ± 4) × 10-5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of â&circ;80 and â&circ;40, with r estimated at (1-10) × 10-3 and (0.1-10) × 10-2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD. ©

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ER -

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂

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Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

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Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO₂, TiO₂, Al₂O₃, and HfO₂