Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

V A Shah (Corresponding Author), M Myronov, S D Rhead, J E Halpin, Andrey Shchepetov, M J Prest, Mika Prunnila, T E Whall, E H C Parker, D R Leadley

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials
Original languageEnglish
Pages (from-to)93-98
Number of pages5
JournalSolid-State Electronics
Volume98
Issue numberAugust
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

Single crystals
membranes
Membranes
sensors
single crystals
Sensors
electronics
Germanium
Tensile strain
Silicon
ripples
Epitaxial growth
crystals
integrated circuits
Integrated circuits
germanium
Electronic equipment
platforms
wafers
Fabrication

Keywords

  • Epitaxy
  • Ge
  • Germanium
  • KOH
  • Membrane
  • TMAH

Cite this

Shah, V. A., Myronov, M., Rhead, S. D., Halpin, J. E., Shchepetov, A., Prest, M. J., ... Leadley, D. R. (2014). Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, 98(August), 93-98. https://doi.org/10.1016/j.sse.2014.04.015
Shah, V A ; Myronov, M ; Rhead, S D ; Halpin, J E ; Shchepetov, Andrey ; Prest, M J ; Prunnila, Mika ; Whall, T E ; Parker, E H C ; Leadley, D R. / Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. In: Solid-State Electronics. 2014 ; Vol. 98, No. August. pp. 93-98.
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Shah, VA, Myronov, M, Rhead, SD, Halpin, JE, Shchepetov, A, Prest, MJ, Prunnila, M, Whall, TE, Parker, EHC & Leadley, DR 2014, 'Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry', Solid-State Electronics, vol. 98, no. August, pp. 93-98. https://doi.org/10.1016/j.sse.2014.04.015

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. / Shah, V A (Corresponding Author); Myronov, M; Rhead, S D; Halpin, J E; Shchepetov, Andrey; Prest, M J; Prunnila, Mika; Whall, T E; Parker, E H C; Leadley, D R.

In: Solid-State Electronics, Vol. 98, No. August, 2014, p. 93-98.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

AU - Shah, V A

AU - Myronov, M

AU - Rhead, S D

AU - Halpin, J E

AU - Shchepetov, Andrey

AU - Prest, M J

AU - Prunnila, Mika

AU - Whall, T E

AU - Parker, E H C

AU - Leadley, D R

PY - 2014

Y1 - 2014

N2 - A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials

AB - A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials

KW - Epitaxy

KW - Ge

KW - Germanium

KW - KOH

KW - Membrane

KW - TMAH

U2 - 10.1016/j.sse.2014.04.015

DO - 10.1016/j.sse.2014.04.015

M3 - Article

VL - 98

SP - 93

EP - 98

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - August

ER -