Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

V A Shah (Corresponding Author), M Myronov, S D Rhead, J E Halpin, Andrey Shchepetov, M J Prest, Mika Prunnila, T E Whall, E H C Parker, D R Leadley

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    3 Citations (Scopus)

    Abstract

    A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials
    Original languageEnglish
    Pages (from-to)93-98
    Number of pages5
    JournalSolid-State Electronics
    Volume98
    Issue numberAugust
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • Epitaxy
    • Ge
    • Germanium
    • KOH
    • Membrane
    • TMAH

    Cite this

    Shah, V. A., Myronov, M., Rhead, S. D., Halpin, J. E., Shchepetov, A., Prest, M. J., Prunnila, M., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2014). Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, 98(August), 93-98. https://doi.org/10.1016/j.sse.2014.04.015