Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

V A Shah (Corresponding Author), M Myronov, S D Rhead, J E Halpin, Andrey Shchepetov, M J Prest, Mika Prunnila, T E Whall, E H C Parker, D R Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials
    Original languageEnglish
    Pages (from-to)93-98
    Number of pages5
    JournalSolid-State Electronics
    Volume98
    Issue numberAugust
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Single crystals
    membranes
    Membranes
    sensors
    single crystals
    Sensors
    electronics
    Germanium
    Tensile strain
    Silicon
    ripples
    Epitaxial growth
    crystals
    integrated circuits
    Integrated circuits
    germanium
    Electronic equipment
    platforms
    wafers
    Fabrication

    Keywords

    • Epitaxy
    • Ge
    • Germanium
    • KOH
    • Membrane
    • TMAH

    Cite this

    Shah, V. A., Myronov, M., Rhead, S. D., Halpin, J. E., Shchepetov, A., Prest, M. J., ... Leadley, D. R. (2014). Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, 98(August), 93-98. https://doi.org/10.1016/j.sse.2014.04.015
    Shah, V A ; Myronov, M ; Rhead, S D ; Halpin, J E ; Shchepetov, Andrey ; Prest, M J ; Prunnila, Mika ; Whall, T E ; Parker, E H C ; Leadley, D R. / Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. In: Solid-State Electronics. 2014 ; Vol. 98, No. August. pp. 93-98.
    @article{4af4b719c9324a379ce99bed7e229e00,
    title = "Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry",
    abstract = "A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials",
    keywords = "Epitaxy, Ge, Germanium, KOH, Membrane, TMAH",
    author = "Shah, {V A} and M Myronov and Rhead, {S D} and Halpin, {J E} and Andrey Shchepetov and Prest, {M J} and Mika Prunnila and Whall, {T E} and Parker, {E H C} and Leadley, {D R}",
    year = "2014",
    doi = "10.1016/j.sse.2014.04.015",
    language = "English",
    volume = "98",
    pages = "93--98",
    journal = "Solid-State Electronics",
    issn = "0038-1101",
    publisher = "Elsevier",
    number = "August",

    }

    Shah, VA, Myronov, M, Rhead, SD, Halpin, JE, Shchepetov, A, Prest, MJ, Prunnila, M, Whall, TE, Parker, EHC & Leadley, DR 2014, 'Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry', Solid-State Electronics, vol. 98, no. August, pp. 93-98. https://doi.org/10.1016/j.sse.2014.04.015

    Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. / Shah, V A (Corresponding Author); Myronov, M; Rhead, S D; Halpin, J E; Shchepetov, Andrey; Prest, M J; Prunnila, Mika; Whall, T E; Parker, E H C; Leadley, D R.

    In: Solid-State Electronics, Vol. 98, No. August, 2014, p. 93-98.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

    AU - Shah, V A

    AU - Myronov, M

    AU - Rhead, S D

    AU - Halpin, J E

    AU - Shchepetov, Andrey

    AU - Prest, M J

    AU - Prunnila, Mika

    AU - Whall, T E

    AU - Parker, E H C

    AU - Leadley, D R

    PY - 2014

    Y1 - 2014

    N2 - A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials

    AB - A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials

    KW - Epitaxy

    KW - Ge

    KW - Germanium

    KW - KOH

    KW - Membrane

    KW - TMAH

    U2 - 10.1016/j.sse.2014.04.015

    DO - 10.1016/j.sse.2014.04.015

    M3 - Article

    VL - 98

    SP - 93

    EP - 98

    JO - Solid-State Electronics

    JF - Solid-State Electronics

    SN - 0038-1101

    IS - August

    ER -