Abstract
The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.
| Original language | English |
|---|---|
| Title of host publication | 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 508-511 |
| ISBN (Print) | 0-7803-8732-5 |
| DOIs | |
| Publication status | Published - 2005 |
| MoE publication type | A4 Article in a conference publication |
Keywords
- micromachining
- moulding
- nanolithography
- replica techniques
- soft lithography
- bending stiffness
- bulk semiconductor micro machining
- flexible silicon stamp
- imprint depth
- nanoimprint lithography
- parallelism
- polymer residual layer thickness
- pressing tool
- thick anchor like imprint areas
- wafer quality