Flexible stamp for nanoimprint lithography

T. Nielsen, R.H. Pedersen, O. Hansen, Tomi Haatainen, Antti Tolkki, Jouni Ahopelto, A. Kristensen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    5 Citations (Scopus)

    Abstract

    The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.
    Original languageEnglish
    Title of host publication18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages508-511
    ISBN (Print)0-7803-8732-5
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication

    Fingerprint

    lithography
    membranes
    wafers
    polymers
    silicon
    pressing
    machining
    standard deviation
    stiffness
    fabrication

    Keywords

    • micromachining
    • moulding
    • nanolithography
    • replica techniques
    • soft lithography
    • bending stiffness
    • bulk semiconductor micro machining
    • flexible silicon stamp
    • imprint depth
    • nanoimprint lithography
    • parallelism
    • polymer residual layer thickness
    • pressing tool
    • thick anchor like imprint areas
    • wafer quality

    Cite this

    Nielsen, T., Pedersen, R. H., Hansen, O., Haatainen, T., Tolkki, A., Ahopelto, J., & Kristensen, A. (2005). Flexible stamp for nanoimprint lithography. In 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005 (pp. 508-511). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/MEMSYS.2005.1453978
    Nielsen, T. ; Pedersen, R.H. ; Hansen, O. ; Haatainen, Tomi ; Tolkki, Antti ; Ahopelto, Jouni ; Kristensen, A. / Flexible stamp for nanoimprint lithography. 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. IEEE Institute of Electrical and Electronic Engineers , 2005. pp. 508-511
    @inproceedings{c0ba5cf340f4495787d41e345dd1db2d,
    title = "Flexible stamp for nanoimprint lithography",
    abstract = "The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.",
    keywords = "micromachining, moulding, nanolithography, replica techniques, soft lithography, bending stiffness, bulk semiconductor micro machining, flexible silicon stamp, imprint depth, nanoimprint lithography, parallelism, polymer residual layer thickness, pressing tool, thick anchor like imprint areas, wafer quality",
    author = "T. Nielsen and R.H. Pedersen and O. Hansen and Tomi Haatainen and Antti Tolkki and Jouni Ahopelto and A. Kristensen",
    year = "2005",
    doi = "10.1109/MEMSYS.2005.1453978",
    language = "English",
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    Nielsen, T, Pedersen, RH, Hansen, O, Haatainen, T, Tolkki, A, Ahopelto, J & Kristensen, A 2005, Flexible stamp for nanoimprint lithography. in 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. IEEE Institute of Electrical and Electronic Engineers , pp. 508-511. https://doi.org/10.1109/MEMSYS.2005.1453978

    Flexible stamp for nanoimprint lithography. / Nielsen, T.; Pedersen, R.H.; Hansen, O.; Haatainen, Tomi; Tolkki, Antti; Ahopelto, Jouni; Kristensen, A.

    18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. IEEE Institute of Electrical and Electronic Engineers , 2005. p. 508-511.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Flexible stamp for nanoimprint lithography

    AU - Nielsen, T.

    AU - Pedersen, R.H.

    AU - Hansen, O.

    AU - Haatainen, Tomi

    AU - Tolkki, Antti

    AU - Ahopelto, Jouni

    AU - Kristensen, A.

    PY - 2005

    Y1 - 2005

    N2 - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

    AB - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

    KW - micromachining

    KW - moulding

    KW - nanolithography

    KW - replica techniques

    KW - soft lithography

    KW - bending stiffness

    KW - bulk semiconductor micro machining

    KW - flexible silicon stamp

    KW - imprint depth

    KW - nanoimprint lithography

    KW - parallelism

    KW - polymer residual layer thickness

    KW - pressing tool

    KW - thick anchor like imprint areas

    KW - wafer quality

    U2 - 10.1109/MEMSYS.2005.1453978

    DO - 10.1109/MEMSYS.2005.1453978

    M3 - Conference article in proceedings

    SN - 0-7803-8732-5

    SP - 508

    EP - 511

    BT - 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Nielsen T, Pedersen RH, Hansen O, Haatainen T, Tolkki A, Ahopelto J et al. Flexible stamp for nanoimprint lithography. In 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. IEEE Institute of Electrical and Electronic Engineers . 2005. p. 508-511 https://doi.org/10.1109/MEMSYS.2005.1453978