Flexible stamp for nanoimprint lithography

T. Nielsen, R.H. Pedersen, O. Hansen, Tomi Haatainen, Antti Tolkki, Jouni Ahopelto, A. Kristensen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.
Original languageEnglish
Title of host publication18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages508-511
ISBN (Print)0-7803-8732-5
DOIs
Publication statusPublished - 2005
MoE publication typeA4 Article in a conference publication

Fingerprint

lithography
membranes
wafers
polymers
silicon
pressing
machining
standard deviation
stiffness
fabrication

Keywords

  • micromachining
  • moulding
  • nanolithography
  • replica techniques
  • soft lithography
  • bending stiffness
  • bulk semiconductor micro machining
  • flexible silicon stamp
  • imprint depth
  • nanoimprint lithography
  • parallelism
  • polymer residual layer thickness
  • pressing tool
  • thick anchor like imprint areas
  • wafer quality

Cite this

Nielsen, T., Pedersen, R. H., Hansen, O., Haatainen, T., Tolkki, A., Ahopelto, J., & Kristensen, A. (2005). Flexible stamp for nanoimprint lithography. In 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005 (pp. 508-511). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/MEMSYS.2005.1453978
Nielsen, T. ; Pedersen, R.H. ; Hansen, O. ; Haatainen, Tomi ; Tolkki, Antti ; Ahopelto, Jouni ; Kristensen, A. / Flexible stamp for nanoimprint lithography. 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. Institute of Electrical and Electronic Engineers IEEE, 2005. pp. 508-511
@inproceedings{c0ba5cf340f4495787d41e345dd1db2d,
title = "Flexible stamp for nanoimprint lithography",
abstract = "The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.",
keywords = "micromachining, moulding, nanolithography, replica techniques, soft lithography, bending stiffness, bulk semiconductor micro machining, flexible silicon stamp, imprint depth, nanoimprint lithography, parallelism, polymer residual layer thickness, pressing tool, thick anchor like imprint areas, wafer quality",
author = "T. Nielsen and R.H. Pedersen and O. Hansen and Tomi Haatainen and Antti Tolkki and Jouni Ahopelto and A. Kristensen",
year = "2005",
doi = "10.1109/MEMSYS.2005.1453978",
language = "English",
isbn = "0-7803-8732-5",
pages = "508--511",
booktitle = "18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Nielsen, T, Pedersen, RH, Hansen, O, Haatainen, T, Tolkki, A, Ahopelto, J & Kristensen, A 2005, Flexible stamp for nanoimprint lithography. in 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. Institute of Electrical and Electronic Engineers IEEE, pp. 508-511. https://doi.org/10.1109/MEMSYS.2005.1453978

Flexible stamp for nanoimprint lithography. / Nielsen, T.; Pedersen, R.H.; Hansen, O.; Haatainen, Tomi; Tolkki, Antti; Ahopelto, Jouni; Kristensen, A.

18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. Institute of Electrical and Electronic Engineers IEEE, 2005. p. 508-511.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Flexible stamp for nanoimprint lithography

AU - Nielsen, T.

AU - Pedersen, R.H.

AU - Hansen, O.

AU - Haatainen, Tomi

AU - Tolkki, Antti

AU - Ahopelto, Jouni

AU - Kristensen, A.

PY - 2005

Y1 - 2005

N2 - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

AB - The design, fabrication and performance of a flexible silicon stamp for homogenous large area nanoimprint lithography (NIL) are presented. The flexible stamp is fabricated by bulk semiconductor micro machining of a 4-inch silicon wafer and consists of thick anchor like imprint areas connected by membranes. The bending stiffness difference between the imprint areas and the membranes ensures that the deformation of the stamp during the imprint process mainly takes place in the membranes, leaving the imprint structures unaffected. By this design the strong demand to the parallelism between stamp and substrate in the imprint situation is decoupled from the pressing tool and the wafer quality. The stamp consist of 1562 imprint areas (1 mm /spl times/ 1 mm) containing the patterns to be replicated. The imprinted patterns are characterized with respect to the imprint depth and the polymer residual layer thickness. It is found that within a 50 mm diameter the polymer residual layer thickness is 18.8 nm with a standard deviation of 6.6 nm.

KW - micromachining

KW - moulding

KW - nanolithography

KW - replica techniques

KW - soft lithography

KW - bending stiffness

KW - bulk semiconductor micro machining

KW - flexible silicon stamp

KW - imprint depth

KW - nanoimprint lithography

KW - parallelism

KW - polymer residual layer thickness

KW - pressing tool

KW - thick anchor like imprint areas

KW - wafer quality

U2 - 10.1109/MEMSYS.2005.1453978

DO - 10.1109/MEMSYS.2005.1453978

M3 - Conference article in proceedings

SN - 0-7803-8732-5

SP - 508

EP - 511

BT - 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Nielsen T, Pedersen RH, Hansen O, Haatainen T, Tolkki A, Ahopelto J et al. Flexible stamp for nanoimprint lithography. In 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005. Institute of Electrical and Electronic Engineers IEEE. 2005. p. 508-511 https://doi.org/10.1109/MEMSYS.2005.1453978