Abstract
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
Original language | English |
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Pages (from-to) | 7168-7175 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 44 |
DOIs | |
Publication status | Published - 2015 |
MoE publication type | A1 Journal article-refereed |
Keywords
- thin-film transistor
- printed electronics
- flexographic printing
- metal oxide