Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

Jaakko Leppäniemi; Olli-Heikki Huttunen; Himadri Majumdar; Ari Alastalo

doi:10.1002/adma.201502569

Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

Jaakko Leppäniemi, Olli-Heikki Huttunen, Himadri Majumdar, Ari Alastalo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

122 Citations (Scopus)

Abstract

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V^-1 s^-1) nanocrystalline In₂O₃ thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In₂O₃ semiconductor layers from precursor-solution is performed on a Al₂O₃ gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.

Original language	English
Pages (from-to)	7168-7175
Journal	Advanced Materials
Volume	27
Issue number	44
DOIs	https://doi.org/10.1002/adma.201502569
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

thin-film transistor
printed electronics
flexographic printing
metal oxide

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10.1002/adma.201502569

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title = "Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate",

abstract = "Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.",

keywords = "thin-film transistor, printed electronics, flexographic printing, metal oxide",

author = "Jaakko Lepp{\"a}niemi and Olli-Heikki Huttunen and Himadri Majumdar and Ari Alastalo",

note = "Project code: 101437 Project code: 88858 Project code: 42501 ",

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AU - Leppäniemi, Jaakko

AU - Huttunen, Olli-Heikki

AU - Majumdar, Himadri

AU - Alastalo, Ari

N1 - Project code: 101437 Project code: 88858 Project code: 42501

PY - 2015

Y1 - 2015

N2 - Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.

AB - Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.

KW - thin-film transistor

KW - printed electronics

KW - flexographic printing

KW - metal oxide

U2 - 10.1002/adma.201502569

DO - 10.1002/adma.201502569

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JO - Advanced Materials

JF - Advanced Materials

IS - 44

ER -

Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

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Keywords

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