Abstract
Industrially scalable and roll-to-roll-compatible
fabrication methods are utilized to fabricate
high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3
thin-film transistors (TFTs) on an flexible plastic
substrate. Flexographic printing of multiple thin In2O3
semiconductor layers from precursor-solution is performed
on a Al2O3 gate dielectric obtained via atomic layer
deposition. A low-temperature post-contact-annealing step
allows control of the TFT device turn-on voltage to ~0 V
for enhancement-mode operation.
Original language | English |
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Pages (from-to) | 7168-7175 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 44 |
DOIs | |
Publication status | Published - 2015 |
MoE publication type | A1 Journal article-refereed |
Keywords
- thin-film transistor
- printed electronics
- flexographic printing
- metal oxide