Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

Research output: Contribution to journalArticleScientificpeer-review

68 Citations (Scopus)

Abstract

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation.
Original languageEnglish
Pages (from-to)7168-7175
JournalAdvanced Materials
Volume27
Issue number44
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Keywords

  • thin-film transistor
  • printed electronics
  • flexographic printing
  • metal oxide

Fingerprint Dive into the research topics of 'Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate'. Together they form a unique fingerprint.

  • Cite this