Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

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Abstract

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation.
Original languageEnglish
Pages (from-to)7168-7175
JournalAdvanced Materials
Volume27
Issue number44
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Thin film transistors
Semiconductor materials
Plastics
Atomic layer deposition
Gate dielectrics
Substrates
Printing
Annealing
Fabrication
Electric potential
Temperature

Keywords

  • thin-film transistor
  • printed electronics
  • flexographic printing
  • metal oxide

Cite this

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title = "Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate",
abstract = "Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation.",
keywords = "thin-film transistor, printed electronics, flexographic printing, metal oxide",
author = "Jaakko Lepp{\"a}niemi and Olli-Heikki Huttunen and Himadri Majumdar and Ari Alastalo",
note = "Project code: 101437 Project code: 88858 Project code: 42501",
year = "2015",
doi = "10.1002/adma.201502569",
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T1 - Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

AU - Leppäniemi, Jaakko

AU - Huttunen, Olli-Heikki

AU - Majumdar, Himadri

AU - Alastalo, Ari

N1 - Project code: 101437 Project code: 88858 Project code: 42501

PY - 2015

Y1 - 2015

N2 - Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation.

AB - Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation.

KW - thin-film transistor

KW - printed electronics

KW - flexographic printing

KW - metal oxide

U2 - 10.1002/adma.201502569

DO - 10.1002/adma.201502569

M3 - Article

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SP - 7168

EP - 7175

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

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