Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

Jaakko Leppäniemi, Olli-Heikki Huttunen, Himadri Majumdar, Ari Alastalo*

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    122 Citations (Scopus)

    Abstract

    Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm² V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
    Original languageEnglish
    Pages (from-to)7168-7175
    JournalAdvanced Materials
    Volume27
    Issue number44
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Keywords

    • thin-film transistor
    • printed electronics
    • flexographic printing
    • metal oxide

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