Flow pattern defects in Czochralski-grown silicon crystals

R. Rantamäki, Jyrki Molarius, Markku Tilli, T. Tuomi

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

Original languageEnglish
Pages (from-to)264-267
JournalPhysica Scripta: Topical Issues
VolumeT69
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Flow Pattern
Silicon
flow distribution
Crystal
Defects
pulling
defects
silicon
crystals
Etching
Annealing
radial distribution
Oxygen
Counting
counting
argon
etching
Decrease
annealing
oxygen

Cite this

Rantamäki, R. ; Molarius, Jyrki ; Tilli, Markku ; Tuomi, T. / Flow pattern defects in Czochralski-grown silicon crystals. In: Physica Scripta: Topical Issues. 1997 ; Vol. T69. pp. 264-267.
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abstract = "The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.",
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Flow pattern defects in Czochralski-grown silicon crystals. / Rantamäki, R.; Molarius, Jyrki; Tilli, Markku; Tuomi, T.

In: Physica Scripta: Topical Issues, Vol. T69, 1997, p. 264-267.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Flow pattern defects in Czochralski-grown silicon crystals

AU - Rantamäki, R.

AU - Molarius, Jyrki

AU - Tilli, Markku

AU - Tuomi, T.

N1 - Project code: ELE4107

PY - 1997

Y1 - 1997

N2 - The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

AB - The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

U2 - 10.1088/0031-8949/1997/T69/055

DO - 10.1088/0031-8949/1997/T69/055

M3 - Article

VL - T69

SP - 264

EP - 267

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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