Flow pattern defects in Czochralski-grown silicon crystals

R. Rantamäki, Jyrki Molarius, Markku Tilli, T. Tuomi

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

Original languageEnglish
Pages (from-to)264 - 267
Number of pages4
JournalPhysica Scripta
VolumeT69
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Flow Pattern
Silicon
flow distribution
Crystal
Defects
pulling
defects
silicon
crystals
Etching
Annealing
radial distribution
Oxygen
Counting
counting
argon
etching
Decrease
annealing
oxygen

Cite this

Rantamäki, R., Molarius, J., Tilli, M., & Tuomi, T. (1997). Flow pattern defects in Czochralski-grown silicon crystals. Physica Scripta, T69, 264 - 267. https://doi.org/10.1088/0031-8949/1997/T69/055
Rantamäki, R. ; Molarius, Jyrki ; Tilli, Markku ; Tuomi, T. / Flow pattern defects in Czochralski-grown silicon crystals. In: Physica Scripta. 1997 ; Vol. T69. pp. 264 - 267.
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abstract = "The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.",
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Rantamäki, R, Molarius, J, Tilli, M & Tuomi, T 1997, 'Flow pattern defects in Czochralski-grown silicon crystals', Physica Scripta, vol. T69, pp. 264 - 267. https://doi.org/10.1088/0031-8949/1997/T69/055

Flow pattern defects in Czochralski-grown silicon crystals. / Rantamäki, R.; Molarius, Jyrki; Tilli, Markku; Tuomi, T.

In: Physica Scripta, Vol. T69, 1997, p. 264 - 267.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Flow pattern defects in Czochralski-grown silicon crystals

AU - Rantamäki, R.

AU - Molarius, Jyrki

AU - Tilli, Markku

AU - Tuomi, T.

N1 - Project code: ELE4107

PY - 1997

Y1 - 1997

N2 - The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

AB - The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.

U2 - 10.1088/0031-8949/1997/T69/055

DO - 10.1088/0031-8949/1997/T69/055

M3 - Article

VL - T69

SP - 264

EP - 267

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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