Fluence effect on ion-implanted As diffusion in relaxed SiGe

P. Laitinen, J. Räisänen (Corresponding Author), I. Riihimäki, Jari Likonen, Elizaveta Vainonen-Ahlgren

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    6 Citations (Scopus)

    Abstract

    A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
    Original languageEnglish
    Pages (from-to)416 - 422
    Number of pages7
    JournalEurophysics Letters
    Volume72
    Issue number3
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Laitinen, P., Räisänen, J., Riihimäki, I., Likonen, J., & Vainonen-Ahlgren, E. (2005). Fluence effect on ion-implanted As diffusion in relaxed SiGe. Europhysics Letters, 72(3), 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1