Fluence effect on ion-implanted As diffusion in relaxed SiGe

P. Laitinen, J. Räisänen (Corresponding Author), I. Riihimäki, Jari Likonen, Elizaveta Vainonen-Ahlgren

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
Original languageEnglish
Pages (from-to)416 - 422
Number of pages7
JournalEurophysics Letters
Volume72
Issue number3
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

fluence
arsenic
ions
silicon
radiation damage
secondary ion mass spectrometry
implantation
recovery
damage
augmentation

Cite this

Laitinen, P., Räisänen, J., Riihimäki, I., Likonen, J., & Vainonen-Ahlgren, E. (2005). Fluence effect on ion-implanted As diffusion in relaxed SiGe. Europhysics Letters, 72(3), 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1
Laitinen, P. ; Räisänen, J. ; Riihimäki, I. ; Likonen, Jari ; Vainonen-Ahlgren, Elizaveta. / Fluence effect on ion-implanted As diffusion in relaxed SiGe. In: Europhysics Letters. 2005 ; Vol. 72, No. 3. pp. 416 - 422.
@article{3345bba6bbdd4b489aefccf14d1b75ea,
title = "Fluence effect on ion-implanted As diffusion in relaxed SiGe",
abstract = "A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.",
author = "P. Laitinen and J. R{\"a}is{\"a}nen and I. Riihim{\"a}ki and Jari Likonen and Elizaveta Vainonen-Ahlgren",
year = "2005",
doi = "10.1209/epl/i2005-10257-1",
language = "English",
volume = "72",
pages = "416 -- 422",
journal = "Europhysics Letters",
issn = "0295-5075",
publisher = "Institute of Physics IOP",
number = "3",

}

Laitinen, P, Räisänen, J, Riihimäki, I, Likonen, J & Vainonen-Ahlgren, E 2005, 'Fluence effect on ion-implanted As diffusion in relaxed SiGe', Europhysics Letters, vol. 72, no. 3, pp. 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1

Fluence effect on ion-implanted As diffusion in relaxed SiGe. / Laitinen, P.; Räisänen, J. (Corresponding Author); Riihimäki, I.; Likonen, Jari; Vainonen-Ahlgren, Elizaveta.

In: Europhysics Letters, Vol. 72, No. 3, 2005, p. 416 - 422.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fluence effect on ion-implanted As diffusion in relaxed SiGe

AU - Laitinen, P.

AU - Räisänen, J.

AU - Riihimäki, I.

AU - Likonen, Jari

AU - Vainonen-Ahlgren, Elizaveta

PY - 2005

Y1 - 2005

N2 - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

AB - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

U2 - 10.1209/epl/i2005-10257-1

DO - 10.1209/epl/i2005-10257-1

M3 - Article

VL - 72

SP - 416

EP - 422

JO - Europhysics Letters

JF - Europhysics Letters

SN - 0295-5075

IS - 3

ER -