Fluence effect on ion-implanted As diffusion in relaxed SiGe

P. Laitinen, J. Räisänen (Corresponding Author), I. Riihimäki, Jari Likonen, Elizaveta Vainonen-Ahlgren

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
    Original languageEnglish
    Pages (from-to)416 - 422
    Number of pages7
    JournalEurophysics Letters
    Volume72
    Issue number3
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

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    fluence
    arsenic
    ions
    silicon
    radiation damage
    secondary ion mass spectrometry
    implantation
    recovery
    damage
    augmentation

    Cite this

    Laitinen, P., Räisänen, J., Riihimäki, I., Likonen, J., & Vainonen-Ahlgren, E. (2005). Fluence effect on ion-implanted As diffusion in relaxed SiGe. Europhysics Letters, 72(3), 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1
    Laitinen, P. ; Räisänen, J. ; Riihimäki, I. ; Likonen, Jari ; Vainonen-Ahlgren, Elizaveta. / Fluence effect on ion-implanted As diffusion in relaxed SiGe. In: Europhysics Letters. 2005 ; Vol. 72, No. 3. pp. 416 - 422.
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    abstract = "A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.",
    author = "P. Laitinen and J. R{\"a}is{\"a}nen and I. Riihim{\"a}ki and Jari Likonen and Elizaveta Vainonen-Ahlgren",
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    Laitinen, P, Räisänen, J, Riihimäki, I, Likonen, J & Vainonen-Ahlgren, E 2005, 'Fluence effect on ion-implanted As diffusion in relaxed SiGe', Europhysics Letters, vol. 72, no. 3, pp. 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1

    Fluence effect on ion-implanted As diffusion in relaxed SiGe. / Laitinen, P.; Räisänen, J. (Corresponding Author); Riihimäki, I.; Likonen, Jari; Vainonen-Ahlgren, Elizaveta.

    In: Europhysics Letters, Vol. 72, No. 3, 2005, p. 416 - 422.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fluence effect on ion-implanted As diffusion in relaxed SiGe

    AU - Laitinen, P.

    AU - Räisänen, J.

    AU - Riihimäki, I.

    AU - Likonen, Jari

    AU - Vainonen-Ahlgren, Elizaveta

    PY - 2005

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    N2 - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

    AB - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

    U2 - 10.1209/epl/i2005-10257-1

    DO - 10.1209/epl/i2005-10257-1

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    EP - 422

    JO - Europhysics Letters

    JF - Europhysics Letters

    SN - 0295-5075

    IS - 3

    ER -