A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
Laitinen, P., Räisänen, J., Riihimäki, I., Likonen, J., & Vainonen-Ahlgren, E. (2005). Fluence effect on ion-implanted As diffusion in relaxed SiGe. Europhysics Letters, 72(3), 416 - 422. https://doi.org/10.1209/epl/i2005-10257-1