Fluence effect on ion-implanted As diffusion in relaxed SiGe

P. Laitinen; J. Räisänen; I. Riihimäki; Jari Likonen; Elizaveta Vainonen-Ahlgren

doi:10.1209/epl/i2005-10257-1

Fluence effect on ion-implanted As diffusion in relaxed SiGe

P. Laitinen
, J. Räisänen^*
, I. Riihimäki
, Jari Likonen
, Elizaveta Vainonen-Ahlgren

^*Corresponding author for this work

University of Helsinki
European Organization for Nuclear Research (CERN)
University of Jyväskylä
VTT (former employee or external)

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Abstract

A systematic study on the fluence (5 × 10⁸ − 4 × 10¹⁴ cm⁻²) dependence of ion-implanted As diffusion in relaxed Si_{1 − x}Ge_x alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 10¹¹ cm⁻² a clear fluence-dependent enhancement in arsenic diffusion was noted for Si_{1 − x}Ge_x. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

Original language	English
Pages (from-to)	416-422
Journal	Europhysics Letters
Volume	72
Issue number	3
DOIs	https://doi.org/10.1209/epl/i2005-10257-1
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

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title = "Fluence effect on ion-implanted As diffusion in relaxed SiGe",

abstract = "A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.",

author = "P. Laitinen and J. R{\"a}is{\"a}nen and I. Riihim{\"a}ki and Jari Likonen and Elizaveta Vainonen-Ahlgren",

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journal = "Europhysics Letters",

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T1 - Fluence effect on ion-implanted As diffusion in relaxed SiGe

AU - Laitinen, P.

AU - Räisänen, J.

AU - Riihimäki, I.

AU - Likonen, Jari

AU - Vainonen-Ahlgren, Elizaveta

PY - 2005

Y1 - 2005

N2 - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

AB - A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

U2 - 10.1209/epl/i2005-10257-1

DO - 10.1209/epl/i2005-10257-1

M3 - Article

SN - 0295-5075

VL - 72

SP - 416

EP - 422

JO - Europhysics Letters

JF - Europhysics Letters

IS - 3

ER -

Fluence effect on ion-implanted As diffusion in relaxed SiGe

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