Focused-ion-beam surface modification for selective growth of InP wires and GaAs

H. Lezec, Jouni Ahopelto, A. Usui, Y. Ochiai

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

Original languageEnglish
Pages (from-to)6251 - 6257
Number of pages7
JournalJapanese Journal of Applied Physics
Volume32
Issue numberPart 1, Number 12B
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Vapor phase epitaxy
Focused ion beams
Epitaxial growth
Hydrides
vapor phase epitaxy
Ion implantation
epitaxy
hydrides
Surface treatment
implantation
Microscopes
ion beams
microscopes
Single crystals
wire
Wire
Fabrication
dosage
Defects
fabrication

Cite this

Lezec, H. ; Ahopelto, Jouni ; Usui, A. ; Ochiai, Y. / Focused-ion-beam surface modification for selective growth of InP wires and GaAs. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. Part 1, Number 12B. pp. 6251 - 6257.
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abstract = "A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.",
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Focused-ion-beam surface modification for selective growth of InP wires and GaAs. / Lezec, H.; Ahopelto, Jouni; Usui, A.; Ochiai, Y.

In: Japanese Journal of Applied Physics, Vol. 32, No. Part 1, Number 12B, 1993, p. 6251 - 6257.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Focused-ion-beam surface modification for selective growth of InP wires and GaAs

AU - Lezec, H.

AU - Ahopelto, Jouni

AU - Usui, A.

AU - Ochiai, Y.

PY - 1993

Y1 - 1993

N2 - A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

AB - A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

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DO - 10.1143/JJAP.32.6251

M3 - Article

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SP - 6251

EP - 6257

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - Part 1, Number 12B

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