Focused-ion-beam surface modification for selective growth of InP wires and GaAs

H. Lezec, Jouni Ahopelto, A. Usui, Y. Ochiai

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)


    A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

    Original languageEnglish
    Pages (from-to)6251 - 6257
    Number of pages7
    JournalJapanese Journal of Applied Physics
    Issue numberPart 1, Number 12B
    Publication statusPublished - 1993
    MoE publication typeA1 Journal article-refereed


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