Focused-ion-beam surface modification for selective growth of InP wires and GaAs

H. Lezec, Jouni Ahopelto, A. Usui, Y. Ochiai

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

    Original languageEnglish
    Pages (from-to)6251 - 6257
    Number of pages7
    JournalJapanese Journal of Applied Physics
    Volume32
    Issue numberPart 1, Number 12B
    DOIs
    Publication statusPublished - 1993
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Vapor phase epitaxy
    Focused ion beams
    Epitaxial growth
    Hydrides
    vapor phase epitaxy
    Ion implantation
    epitaxy
    hydrides
    Surface treatment
    implantation
    Microscopes
    ion beams
    microscopes
    Single crystals
    wire
    Wire
    Fabrication
    dosage
    Defects
    fabrication

    Cite this

    Lezec, H. ; Ahopelto, Jouni ; Usui, A. ; Ochiai, Y. / Focused-ion-beam surface modification for selective growth of InP wires and GaAs. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. Part 1, Number 12B. pp. 6251 - 6257.
    @article{291ef655baf04724a18fd5c2527fef1e,
    title = "Focused-ion-beam surface modification for selective growth of InP wires and GaAs",
    abstract = "A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.",
    author = "H. Lezec and Jouni Ahopelto and A. Usui and Y. Ochiai",
    year = "1993",
    doi = "10.1143/JJAP.32.6251",
    language = "English",
    volume = "32",
    pages = "6251 -- 6257",
    journal = "Japanese Journal of Applied Physics",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "Part 1, Number 12B",

    }

    Focused-ion-beam surface modification for selective growth of InP wires and GaAs. / Lezec, H.; Ahopelto, Jouni; Usui, A.; Ochiai, Y.

    In: Japanese Journal of Applied Physics, Vol. 32, No. Part 1, Number 12B, 1993, p. 6251 - 6257.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Focused-ion-beam surface modification for selective growth of InP wires and GaAs

    AU - Lezec, H.

    AU - Ahopelto, Jouni

    AU - Usui, A.

    AU - Ochiai, Y.

    PY - 1993

    Y1 - 1993

    N2 - A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

    AB - A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.

    U2 - 10.1143/JJAP.32.6251

    DO - 10.1143/JJAP.32.6251

    M3 - Article

    VL - 32

    SP - 6251

    EP - 6257

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    IS - Part 1, Number 12B

    ER -