A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of InP. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.
|Pages (from-to)||6251 - 6257|
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics|
|Issue number||Part 1, Number 12B|
|Publication status||Published - 1993|
|MoE publication type||A1 Journal article-refereed|