Formation of CoSi2 on amorphous silicon by RTA

Gyözö Drozdy, Hannu Ronkainen, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.
Original languageEnglish
Pages (from-to)72-79
JournalApplied Surface Science
Volume38
DOIs
Publication statusPublished - 1989
MoE publication typeA1 Journal article-refereed

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Rapid thermal annealing
Cobalt
Amorphous silicon
Silicon
Surface morphology
Crystalline materials

Cite this

Drozdy, Gyözö ; Ronkainen, Hannu ; Suni, Ilkka. / Formation of CoSi2 on amorphous silicon by RTA. In: Applied Surface Science. 1989 ; Vol. 38. pp. 72-79.
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Formation of CoSi2 on amorphous silicon by RTA. / Drozdy, Gyözö; Ronkainen, Hannu; Suni, Ilkka.

In: Applied Surface Science, Vol. 38, 1989, p. 72-79.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Formation of CoSi2 on amorphous silicon by RTA

AU - Drozdy, Gyözö

AU - Ronkainen, Hannu

AU - Suni, Ilkka

PY - 1989

Y1 - 1989

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AB - The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.

U2 - 10.1016/0169-4332(89)90521-7

DO - 10.1016/0169-4332(89)90521-7

M3 - Article

VL - 38

SP - 72

EP - 79

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -