Formation of CoSi2 on amorphous silicon by RTA

Gyözö Drozdy, Hannu Ronkainen, Ilkka Suni

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    Abstract

    The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.
    Original languageEnglish
    Pages (from-to)72-79
    JournalApplied Surface Science
    Volume38
    DOIs
    Publication statusPublished - 1989
    MoE publication typeA1 Journal article-refereed

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