Formation of CoSi2 on amorphous silicon by RTA

Gyözö Drozdy; Hannu Ronkainen; Ilkka Suni

doi:10.1016/0169-4332(89)90521-7

Formation of CoSi₂ on amorphous silicon by RTA

Gyözö Drozdy, Hannu Ronkainen, Ilkka Suni

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.

Original language	English
Pages (from-to)	72-79
Journal	Applied Surface Science
Volume	38
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(89)90521-7
Publication status	Published - 1989
MoE publication type	A1 Journal article-refereed

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10.1016/0169-4332(89)90521-7

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title = "Formation of CoSi2 on amorphous silicon by RTA",

abstract = "The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.",

author = "Gy{\"o}z{\"o} Drozdy and Hannu Ronkainen and Ilkka Suni",

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AU - Drozdy, Gyözö

AU - Ronkainen, Hannu

AU - Suni, Ilkka

PY - 1989

Y1 - 1989

N2 - The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.

AB - The formation of cobalt silicide by RTA from a cobalt layer on top of amorphous silicon was compared to the usual case of cobalt on single crystalline silicon. The reaction between cobalt and amorphous silicon is faster and provides better surface morphology. It also results in an improved edge definition. The final resistivities of the two cobalt disilicide layers are the same.

U2 - 10.1016/0169-4332(89)90521-7

DO - 10.1016/0169-4332(89)90521-7

M3 - Article

SN - 0169-4332

VL - 38

SP - 72

EP - 79

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Formation of CoSi2 on amorphous silicon by RTA

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Formation of CoSi₂ on amorphous silicon by RTA