Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides

A review

Riikka Puurunen

Research output: Contribution to journalReview ArticleScientificpeer-review

60 Citations (Scopus)

Abstract

As has been known for a decade, metal oxide particles can form in a single reaction of gaseous metal chlorides with solid oxides. This is an undesirable effect in the fabrication of thin films by atomic layer deposition (ALD). This work reviews the experimental results related to the metal oxide particle formation and the mechanisms suggested to account for it. The suggested mechanisms cannot explain the observations, but systematic analysis of the possible reaction paths delivers one reaction mechanism candidate, based on a reaction between surface chlorine groups and the hydroxyl groups of gaseous metal hydroxychloride intermediates. The consequences of the proposed mechanism are discussed.
Original languageEnglish
Pages (from-to)79 - 90
Number of pages12
JournalChemical Vapor Deposition
Volume11
Issue number2
DOIs
Publication statusPublished - 2005
MoE publication typeA2 Review article in a scientific journal

Fingerprint

Atomic layer deposition
Chemisorption
atomic layer epitaxy
chemisorption
Oxides
metal oxides
Chlorides
Metals
chlorides
metals
Chlorine
Surface reactions
Hydroxyl Radical
chlorine
Fabrication
Thin films
fabrication
oxides
thin films

Keywords

  • atomic layer deposition
  • metal chlorides

Cite this

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abstract = "As has been known for a decade, metal oxide particles can form in a single reaction of gaseous metal chlorides with solid oxides. This is an undesirable effect in the fabrication of thin films by atomic layer deposition (ALD). This work reviews the experimental results related to the metal oxide particle formation and the mechanisms suggested to account for it. The suggested mechanisms cannot explain the observations, but systematic analysis of the possible reaction paths delivers one reaction mechanism candidate, based on a reaction between surface chlorine groups and the hydroxyl groups of gaseous metal hydroxychloride intermediates. The consequences of the proposed mechanism are discussed.",
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journal = "Chemical Vapor Deposition",
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Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides : A review. / Puurunen, Riikka.

In: Chemical Vapor Deposition, Vol. 11, No. 2, 2005, p. 79 - 90.

Research output: Contribution to journalReview ArticleScientificpeer-review

TY - JOUR

T1 - Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides

T2 - A review

AU - Puurunen, Riikka

PY - 2005

Y1 - 2005

N2 - As has been known for a decade, metal oxide particles can form in a single reaction of gaseous metal chlorides with solid oxides. This is an undesirable effect in the fabrication of thin films by atomic layer deposition (ALD). This work reviews the experimental results related to the metal oxide particle formation and the mechanisms suggested to account for it. The suggested mechanisms cannot explain the observations, but systematic analysis of the possible reaction paths delivers one reaction mechanism candidate, based on a reaction between surface chlorine groups and the hydroxyl groups of gaseous metal hydroxychloride intermediates. The consequences of the proposed mechanism are discussed.

AB - As has been known for a decade, metal oxide particles can form in a single reaction of gaseous metal chlorides with solid oxides. This is an undesirable effect in the fabrication of thin films by atomic layer deposition (ALD). This work reviews the experimental results related to the metal oxide particle formation and the mechanisms suggested to account for it. The suggested mechanisms cannot explain the observations, but systematic analysis of the possible reaction paths delivers one reaction mechanism candidate, based on a reaction between surface chlorine groups and the hydroxyl groups of gaseous metal hydroxychloride intermediates. The consequences of the proposed mechanism are discussed.

KW - atomic layer deposition

KW - metal chlorides

U2 - 10.1002/cvde.200400021

DO - 10.1002/cvde.200400021

M3 - Review Article

VL - 11

SP - 79

EP - 90

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

SN - 0948-1907

IS - 2

ER -