Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers

Georg Pillwein, Benjamin Lindner, Gerhard Brunthaler, Jouni Ahopelto, Mika Prunnila

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We have electrically investigated the two dimensional electron gas (2DEG) of Si inversion layers in MOS structures based on silicon on insulator (SOI) substrates. When investigating the metal‐to‐insulator transition in two dimensions (2D‐MIT), we observed strong reproducible fluctuations in the measured signals versus gate voltage. We propose that in the gated transition region from the implanted to non‐implanted regions of the hall‐bar mesa, the implanted impurity atoms lead to strong fluctuations in the potential landscape. Electrically these potential fluctuations may behave like quantum dots, which will block or allow electron transport totally random as a function of gate voltage and will thus generate the observed fluctuations. Measurements depending on both, gate and contact bias, indeed shows diamond like shapes typical for Coulomb blockade, supporting our interpretation. We discuss how these findings allow us to improve our measurements in the insulating region of the 2D‐MIT.
Original languageEnglish
Title of host publicationPhysics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006
PublisherAmerican Institute of Physics AIP
ISBN (Print)978-0-7354-0397-0
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
Event28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

SeriesAIP Conference Proceedings
Number1
Volume893
ISSN0094-243X

Conference

Conference28th International Conference on the Physics of Semiconductors - ICPS 2006
CountryAustria
CityVienna
Period24/07/0628/07/06

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quantum dots
insulators
inversions
metals
mesas
electric potential
electron gas
diamonds
impurities
silicon
atoms
electrons

Cite this

Pillwein, G., Lindner, B., Brunthaler, G., Ahopelto, J., & Prunnila, M. (2007). Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers. In Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006 [599] American Institute of Physics AIP. AIP Conference Proceedings, No. 1, Vol.. 893 https://doi.org/10.1063/1.2730034
Pillwein, Georg ; Lindner, Benjamin ; Brunthaler, Gerhard ; Ahopelto, Jouni ; Prunnila, Mika. / Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers. Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP, 2007. (AIP Conference Proceedings; No. 1, Vol. 893).
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title = "Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers",
abstract = "We have electrically investigated the two dimensional electron gas (2DEG) of Si inversion layers in MOS structures based on silicon on insulator (SOI) substrates. When investigating the metal‐to‐insulator transition in two dimensions (2D‐MIT), we observed strong reproducible fluctuations in the measured signals versus gate voltage. We propose that in the gated transition region from the implanted to non‐implanted regions of the hall‐bar mesa, the implanted impurity atoms lead to strong fluctuations in the potential landscape. Electrically these potential fluctuations may behave like quantum dots, which will block or allow electron transport totally random as a function of gate voltage and will thus generate the observed fluctuations. Measurements depending on both, gate and contact bias, indeed shows diamond like shapes typical for Coulomb blockade, supporting our interpretation. We discuss how these findings allow us to improve our measurements in the insulating region of the 2D‐MIT.",
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Pillwein, G, Lindner, B, Brunthaler, G, Ahopelto, J & Prunnila, M 2007, Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers. in Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006., 599, American Institute of Physics AIP, AIP Conference Proceedings, no. 1, vol. 893, 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730034

Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers. / Pillwein, Georg; Lindner, Benjamin; Brunthaler, Gerhard; Ahopelto, Jouni; Prunnila, Mika.

Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP, 2007. 599 (AIP Conference Proceedings; No. 1, Vol. 893).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers

AU - Pillwein, Georg

AU - Lindner, Benjamin

AU - Brunthaler, Gerhard

AU - Ahopelto, Jouni

AU - Prunnila, Mika

PY - 2007

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N2 - We have electrically investigated the two dimensional electron gas (2DEG) of Si inversion layers in MOS structures based on silicon on insulator (SOI) substrates. When investigating the metal‐to‐insulator transition in two dimensions (2D‐MIT), we observed strong reproducible fluctuations in the measured signals versus gate voltage. We propose that in the gated transition region from the implanted to non‐implanted regions of the hall‐bar mesa, the implanted impurity atoms lead to strong fluctuations in the potential landscape. Electrically these potential fluctuations may behave like quantum dots, which will block or allow electron transport totally random as a function of gate voltage and will thus generate the observed fluctuations. Measurements depending on both, gate and contact bias, indeed shows diamond like shapes typical for Coulomb blockade, supporting our interpretation. We discuss how these findings allow us to improve our measurements in the insulating region of the 2D‐MIT.

AB - We have electrically investigated the two dimensional electron gas (2DEG) of Si inversion layers in MOS structures based on silicon on insulator (SOI) substrates. When investigating the metal‐to‐insulator transition in two dimensions (2D‐MIT), we observed strong reproducible fluctuations in the measured signals versus gate voltage. We propose that in the gated transition region from the implanted to non‐implanted regions of the hall‐bar mesa, the implanted impurity atoms lead to strong fluctuations in the potential landscape. Electrically these potential fluctuations may behave like quantum dots, which will block or allow electron transport totally random as a function of gate voltage and will thus generate the observed fluctuations. Measurements depending on both, gate and contact bias, indeed shows diamond like shapes typical for Coulomb blockade, supporting our interpretation. We discuss how these findings allow us to improve our measurements in the insulating region of the 2D‐MIT.

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M3 - Conference article in proceedings

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Pillwein G, Lindner B, Brunthaler G, Ahopelto J, Prunnila M. Formation of quantum dots in the contact region in the metal-insulator transition regime in high-mobility Si inversion layers. In Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. American Institute of Physics AIP. 2007. 599. (AIP Conference Proceedings; No. 1, Vol. 893). https://doi.org/10.1063/1.2730034