Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene)

Eero Punkka, Michael Rubner

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

Rectifying contacts have been fabricated to structurally anisotropic Langmuir-Blodgett films of poly(3-hexylthiophene). The Schottky barriers were found to be of low resistance compared to the transverse resistance of the anisotropic films. The transport properties indicate bulk limited conduction and charge carrier tunnelling through thin rectifying barriers. The capacitive properties were analyzed within the framework of an appropriate equivalence circuit, and reasonable parameter values were obtained for the thin depletion layers and dopant concentrations.

Original languageEnglish
Pages (from-to)1509 - 1513
Number of pages5
JournalSynthetic Metals
Volume42
Issue number1-2
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Langmuir Blodgett films
Langmuir-Blodgett films
Charge carriers
Transport properties
Doping (additives)
Networks (circuits)
low resistance
equivalence
charge carriers
depletion
transport properties
conduction
poly(3-hexylthiophene)

Cite this

Punkka, Eero ; Rubner, Michael. / Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene). In: Synthetic Metals. 1991 ; Vol. 42, No. 1-2. pp. 1509 - 1513.
@article{c2d44951b6f54314a4c9eb88d415863c,
title = "Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene)",
abstract = "Rectifying contacts have been fabricated to structurally anisotropic Langmuir-Blodgett films of poly(3-hexylthiophene). The Schottky barriers were found to be of low resistance compared to the transverse resistance of the anisotropic films. The transport properties indicate bulk limited conduction and charge carrier tunnelling through thin rectifying barriers. The capacitive properties were analyzed within the framework of an appropriate equivalence circuit, and reasonable parameter values were obtained for the thin depletion layers and dopant concentrations.",
author = "Eero Punkka and Michael Rubner",
year = "1991",
doi = "10.1016/0379-6779(91)91887-G",
language = "English",
volume = "42",
pages = "1509 -- 1513",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier",
number = "1-2",

}

Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene). / Punkka, Eero; Rubner, Michael.

In: Synthetic Metals, Vol. 42, No. 1-2, 1991, p. 1509 - 1513.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Formation of rectifying contacts to Langmuir-Blodgett films of poly(3-hexylthiophene)

AU - Punkka, Eero

AU - Rubner, Michael

PY - 1991

Y1 - 1991

N2 - Rectifying contacts have been fabricated to structurally anisotropic Langmuir-Blodgett films of poly(3-hexylthiophene). The Schottky barriers were found to be of low resistance compared to the transverse resistance of the anisotropic films. The transport properties indicate bulk limited conduction and charge carrier tunnelling through thin rectifying barriers. The capacitive properties were analyzed within the framework of an appropriate equivalence circuit, and reasonable parameter values were obtained for the thin depletion layers and dopant concentrations.

AB - Rectifying contacts have been fabricated to structurally anisotropic Langmuir-Blodgett films of poly(3-hexylthiophene). The Schottky barriers were found to be of low resistance compared to the transverse resistance of the anisotropic films. The transport properties indicate bulk limited conduction and charge carrier tunnelling through thin rectifying barriers. The capacitive properties were analyzed within the framework of an appropriate equivalence circuit, and reasonable parameter values were obtained for the thin depletion layers and dopant concentrations.

U2 - 10.1016/0379-6779(91)91887-G

DO - 10.1016/0379-6779(91)91887-G

M3 - Article

VL - 42

SP - 1509

EP - 1513

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-2

ER -