The authors from University of Reims have developed a physical organic transistor model and programmed a simulation tool for it. They have set up an interactive website where anyone can test the model and simulate their own devices. Wide variety of parameters can be chosen, including physical material parameters, interface traps and contact parasitics. The simulation results are collected in plots and data files that can be downloaded easily. Results include bias dependent characteristics of current, charge, quasi-static capacitance, mobility, contact resistance, nonlinear injection, electric fields and band diagram. Applicability of the model is proven by comparing measured data with the simulated results. There are many models available in literature, but using them in a computer simulation takes time and effort. Comparison with commercial simulation tools (e.g. Silvaco's) was not done.The website and the model are easy to use, and they are of great help when trying to understand which parameters affect which kind of transistor behaviour. The model works well with materials that form good interfaces. Some physical parameters like surface (backchannel) conduction are not included. Enough parameters must be known beforehand in order to get a realistic fit with real data.
|Number of pages||2|
|Publication status||Published - 2012|
|MoE publication type||B1 Article in a scientific magazine|
- organic transistor