Free web-based simulation tool for organic transistor modelling

Tomi Hassinen (Corresponding Author)

Research output: Contribution to journalArticleScientific

Abstract

The authors from University of Reims have developed a physical organic transistor model and programmed a simulation tool for it. They have set up an interactive website where anyone can test the model and simulate their own devices. Wide variety of parameters can be chosen, including physical material parameters, interface traps and contact parasitics. The simulation results are collected in plots and data files that can be downloaded easily. Results include bias dependent characteristics of current, charge, quasi-static capacitance, mobility, contact resistance, nonlinear injection, electric fields and band diagram. Applicability of the model is proven by comparing measured data with the simulated results. There are many models available in literature, but using them in a computer simulation takes time and effort. Comparison with commercial simulation tools (e.g. Silvaco's) was not done.The website and the model are easy to use, and they are of great help when trying to understand which parameters affect which kind of transistor behaviour. The model works well with materials that form good interfaces. Some physical parameters like surface (backchannel) conduction are not included. Enough parameters must be known beforehand in order to get a realistic fit with real data.
Original languageEnglish
Pages (from-to)17-18
Number of pages2
JournalOrganic electronics
Issue number9
Publication statusPublished - 2012
MoE publication typeB1 Article in a scientific magazine

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Transistors
Websites
Contact resistance
Capacitance
Electric fields
Computer simulation

Keywords

  • organic transistor
  • simulation
  • modelling

Cite this

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title = "Free web-based simulation tool for organic transistor modelling",
abstract = "The authors from University of Reims have developed a physical organic transistor model and programmed a simulation tool for it. They have set up an interactive website where anyone can test the model and simulate their own devices. Wide variety of parameters can be chosen, including physical material parameters, interface traps and contact parasitics. The simulation results are collected in plots and data files that can be downloaded easily. Results include bias dependent characteristics of current, charge, quasi-static capacitance, mobility, contact resistance, nonlinear injection, electric fields and band diagram. Applicability of the model is proven by comparing measured data with the simulated results. There are many models available in literature, but using them in a computer simulation takes time and effort. Comparison with commercial simulation tools (e.g. Silvaco's) was not done.The website and the model are easy to use, and they are of great help when trying to understand which parameters affect which kind of transistor behaviour. The model works well with materials that form good interfaces. Some physical parameters like surface (backchannel) conduction are not included. Enough parameters must be known beforehand in order to get a realistic fit with real data.",
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Free web-based simulation tool for organic transistor modelling. / Hassinen, Tomi (Corresponding Author).

In: Organic electronics, No. 9, 2012, p. 17-18.

Research output: Contribution to journalArticleScientific

TY - JOUR

T1 - Free web-based simulation tool for organic transistor modelling

AU - Hassinen, Tomi

N1 - Project code: 30050

PY - 2012

Y1 - 2012

N2 - The authors from University of Reims have developed a physical organic transistor model and programmed a simulation tool for it. They have set up an interactive website where anyone can test the model and simulate their own devices. Wide variety of parameters can be chosen, including physical material parameters, interface traps and contact parasitics. The simulation results are collected in plots and data files that can be downloaded easily. Results include bias dependent characteristics of current, charge, quasi-static capacitance, mobility, contact resistance, nonlinear injection, electric fields and band diagram. Applicability of the model is proven by comparing measured data with the simulated results. There are many models available in literature, but using them in a computer simulation takes time and effort. Comparison with commercial simulation tools (e.g. Silvaco's) was not done.The website and the model are easy to use, and they are of great help when trying to understand which parameters affect which kind of transistor behaviour. The model works well with materials that form good interfaces. Some physical parameters like surface (backchannel) conduction are not included. Enough parameters must be known beforehand in order to get a realistic fit with real data.

AB - The authors from University of Reims have developed a physical organic transistor model and programmed a simulation tool for it. They have set up an interactive website where anyone can test the model and simulate their own devices. Wide variety of parameters can be chosen, including physical material parameters, interface traps and contact parasitics. The simulation results are collected in plots and data files that can be downloaded easily. Results include bias dependent characteristics of current, charge, quasi-static capacitance, mobility, contact resistance, nonlinear injection, electric fields and band diagram. Applicability of the model is proven by comparing measured data with the simulated results. There are many models available in literature, but using them in a computer simulation takes time and effort. Comparison with commercial simulation tools (e.g. Silvaco's) was not done.The website and the model are easy to use, and they are of great help when trying to understand which parameters affect which kind of transistor behaviour. The model works well with materials that form good interfaces. Some physical parameters like surface (backchannel) conduction are not included. Enough parameters must be known beforehand in order to get a realistic fit with real data.

KW - organic transistor

KW - simulation

KW - modelling

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JO - Organic electronics

JF - Organic electronics

SN - 2109-0688

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