Frequency stabilization of a GaAlAs semiconductor laser by voltage control

Hanne Ludvigsen, Christer Holmlund, Erkki Ikonen, Marja-Leena Junttila, Erkki Ikonen, Marja-Leena Junttila, Hanne Ludvigsen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A single-mode GaAlAs laser is frequency stabilized by keeping the injection current and the voltage across the laser constant. A long-term frequency stability of 7 × 10−8 and a reproducibility of 3 × 10−7 were obtained.
Original languageEnglish
Pages (from-to)3384-3386
JournalApplied Optics
Volume31
Issue number18
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint

Frequency stability
frequency stability
laser modes
Laser modes
Voltage control
Semiconductor lasers
Stabilization
stabilization
semiconductor lasers
injection
Lasers
Electric potential
electric potential
lasers

Cite this

Ludvigsen, H., Holmlund, C., Ikonen, E., Junttila, M-L., Ikonen, E., Junttila, M-L., & Ludvigsen, H. (1992). Frequency stabilization of a GaAlAs semiconductor laser by voltage control. Applied Optics, 31(18), 3384-3386. https://doi.org/10.1364/AO.31.003384
Ludvigsen, Hanne ; Holmlund, Christer ; Ikonen, Erkki ; Junttila, Marja-Leena ; Ikonen, Erkki ; Junttila, Marja-Leena ; Ludvigsen, Hanne. / Frequency stabilization of a GaAlAs semiconductor laser by voltage control. In: Applied Optics. 1992 ; Vol. 31, No. 18. pp. 3384-3386.
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abstract = "A single-mode GaAlAs laser is frequency stabilized by keeping the injection current and the voltage across the laser constant. A long-term frequency stability of 7 × 10−8 and a reproducibility of 3 × 10−7 were obtained.",
author = "Hanne Ludvigsen and Christer Holmlund and Erkki Ikonen and Marja-Leena Junttila and Erkki Ikonen and Marja-Leena Junttila and Hanne Ludvigsen",
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Ludvigsen, H, Holmlund, C, Ikonen, E, Junttila, M-L, Ikonen, E, Junttila, M-L & Ludvigsen, H 1992, 'Frequency stabilization of a GaAlAs semiconductor laser by voltage control', Applied Optics, vol. 31, no. 18, pp. 3384-3386. https://doi.org/10.1364/AO.31.003384

Frequency stabilization of a GaAlAs semiconductor laser by voltage control. / Ludvigsen, Hanne; Holmlund, Christer; Ikonen, Erkki; Junttila, Marja-Leena; Ikonen, Erkki; Junttila, Marja-Leena; Ludvigsen, Hanne.

In: Applied Optics, Vol. 31, No. 18, 1992, p. 3384-3386.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Frequency stabilization of a GaAlAs semiconductor laser by voltage control

AU - Ludvigsen, Hanne

AU - Holmlund, Christer

AU - Ikonen, Erkki

AU - Junttila, Marja-Leena

AU - Ikonen, Erkki

AU - Junttila, Marja-Leena

AU - Ludvigsen, Hanne

N1 - Project code: AUTT9411

PY - 1992

Y1 - 1992

N2 - A single-mode GaAlAs laser is frequency stabilized by keeping the injection current and the voltage across the laser constant. A long-term frequency stability of 7 × 10−8 and a reproducibility of 3 × 10−7 were obtained.

AB - A single-mode GaAlAs laser is frequency stabilized by keeping the injection current and the voltage across the laser constant. A long-term frequency stability of 7 × 10−8 and a reproducibility of 3 × 10−7 were obtained.

U2 - 10.1364/AO.31.003384

DO - 10.1364/AO.31.003384

M3 - Article

VL - 31

SP - 3384

EP - 3386

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 18

ER -

Ludvigsen H, Holmlund C, Ikonen E, Junttila M-L, Ikonen E, Junttila M-L et al. Frequency stabilization of a GaAlAs semiconductor laser by voltage control. Applied Optics. 1992;31(18):3384-3386. https://doi.org/10.1364/AO.31.003384