Frequency stabilization of a GaAlAs semiconductor laser by voltage control

Hanne Ludvigsen, Christer Holmlund, Erkki Ikonen, Marja-Leena Junttila, Erkki Ikonen, Marja-Leena Junttila, Hanne Ludvigsen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A single-mode GaAlAs laser is frequency stabilized by keeping the injection current and the voltage across the laser constant. A long-term frequency stability of 7 × 10−8 and a reproducibility of 3 × 10−7 were obtained.
Original languageEnglish
Pages (from-to)3384-3386
JournalApplied Optics
Volume31
Issue number18
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Frequency stabilization of a GaAlAs semiconductor laser by voltage control'. Together they form a unique fingerprint.

  • Cite this

    Ludvigsen, H., Holmlund, C., Ikonen, E., Junttila, M-L., Ikonen, E., Junttila, M-L., & Ludvigsen, H. (1992). Frequency stabilization of a GaAlAs semiconductor laser by voltage control. Applied Optics, 31(18), 3384-3386. https://doi.org/10.1364/AO.31.003384