Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

Hanne Ludvigsen, Christer Holmlund

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.

Original languageEnglish
Pages (from-to)2135-2137
Number of pages3
JournalReview of Scientific Instruments
Volume63
Issue number4
DOIs
Publication statusPublished - 1992
MoE publication typeNot Eligible

Keywords

  • chemical elements
  • semiconductor lasers
  • absorption line

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