Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

Hanne Ludvigsen, Christer Holmlund

    Research output: Contribution to journalArticleScientificpeer-review

    18 Citations (Scopus)

    Abstract

    A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.

    Original languageEnglish
    Pages (from-to)2135-2137
    Number of pages3
    JournalReview of Scientific Instruments
    Volume63
    Issue number4
    DOIs
    Publication statusPublished - 1992
    MoE publication typeNot Eligible

    Keywords

    • chemical elements
    • semiconductor lasers
    • absorption line

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