Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

Hanne Ludvigsen; Christer Holmlund

doi:10.1063/1.1143179

Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

Hanne Ludvigsen^*
, Christer Holmlund

^*Corresponding author for this work

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

19 Citations (Scopus)

Abstract

A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10^-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.

Original language	English
Pages (from-to)	2135-2137
Number of pages	3
Journal	Review of Scientific Instruments
Volume	63
Issue number	4
DOIs	https://doi.org/10.1063/1.1143179
Publication status	Published - 1992
MoE publication type	Not Eligible

Keywords

chemical elements
semiconductor lasers
absorption line

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10.1063/1.1143179

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title = "Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor",

abstract = "A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.",

keywords = "chemical elements, semiconductor lasers, absorption line",

author = "Hanne Ludvigsen and Christer Holmlund",

year = "1992",

doi = "10.1063/1.1143179",

language = "English",

volume = "63",

pages = "2135--2137",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics (AIP)",

number = "4",

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T1 - Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

AU - Ludvigsen, Hanne

AU - Holmlund, Christer

PY - 1992

Y1 - 1992

N2 - A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.

AB - A single mode GaAlAs semiconductor laser operating at around 830 nm has been locked in frequency to the center of an absorption line of molecular iodine vapor. A relative frequency stability of better than 10-9 was obtained for time periods longer than 1 s. This stabilization scheme increases the flexibility of wavelength selection. A method has been developed to estimate the stability when only one stabilized system is available.

KW - chemical elements

KW - semiconductor lasers

KW - absorption line

UR - https://www.scopus.com/pages/publications/0001268784

U2 - 10.1063/1.1143179

DO - 10.1063/1.1143179

M3 - Article

AN - SCOPUS:0001268784

SN - 0034-6748

VL - 63

SP - 2135

EP - 2137

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 4

ER -

Frequency stabilization of a GaAlAs semiconductor laser to an absorption line of iodine vapor

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