Fully differential cryogenic transistor amplifier

Nikolay Beev; Mikko Kiviranta

doi:10.1016/j.cryogenics.2013.06.004

Fully differential cryogenic transistor amplifier

Nikolay Beev^*, Mikko Kiviranta

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

Original language	English
Pages (from-to)	129-133
Journal	Cryogenics
Volume	57
DOIs	https://doi.org/10.1016/j.cryogenics.2013.06.004
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

Keywords

low-noice apmplifier
SIGe transistors
SQUID readout

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10.1016/j.cryogenics.2013.06.004

Cite this

@article{79b1c61bc66b4f8fb82a4af29008376d,

title = "Fully differential cryogenic transistor amplifier",

abstract = "We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.",

keywords = "low-noice apmplifier, SIGe transistors, SQUID readout",

author = "Nikolay Beev and Mikko Kiviranta",

year = "2013",

doi = "10.1016/j.cryogenics.2013.06.004",

language = "English",

volume = "57",

pages = "129--133",

journal = "Cryogenics",

issn = "0011-2275",

publisher = "Elsevier",

}

TY - JOUR

T1 - Fully differential cryogenic transistor amplifier

AU - Beev, Nikolay

AU - Kiviranta, Mikko

PY - 2013

Y1 - 2013

N2 - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

AB - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

KW - low-noice apmplifier

KW - SIGe transistors

KW - SQUID readout

U2 - 10.1016/j.cryogenics.2013.06.004

DO - 10.1016/j.cryogenics.2013.06.004

M3 - Article

SN - 0011-2275

VL - 57

SP - 129

EP - 133

JO - Cryogenics

JF - Cryogenics

ER -

Fully differential cryogenic transistor amplifier

Abstract

Keywords

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