Fully differential cryogenic transistor amplifier

Nikolay Beev (Corresponding Author), Mikko Kiviranta

    Research output: Contribution to journalArticleScientificpeer-review

    11 Citations (Scopus)

    Abstract

    We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.
    Original languageEnglish
    Pages (from-to)129-133
    Number of pages4
    JournalCryogenics
    Volume57
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    transistor amplifiers
    Cryogenics
    cryogenics
    Transistors
    amplifiers
    SQUIDs
    Bandwidth
    bandwidth
    Differential amplifiers
    Tunnel junctions
    differential amplifiers
    superconducting devices
    interference
    Temperature
    noise temperature
    tunnel junctions
    Fluxes
    Detectors
    readout
    baths

    Keywords

    • low-noice apmplifier
    • SIGe transistors
    • SQUID readout

    Cite this

    Beev, Nikolay ; Kiviranta, Mikko. / Fully differential cryogenic transistor amplifier. In: Cryogenics. 2013 ; Vol. 57. pp. 129-133.
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    title = "Fully differential cryogenic transistor amplifier",
    abstract = "We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.",
    keywords = "low-noice apmplifier, SIGe transistors, SQUID readout",
    author = "Nikolay Beev and Mikko Kiviranta",
    year = "2013",
    doi = "10.1016/j.cryogenics.2013.06.004",
    language = "English",
    volume = "57",
    pages = "129--133",
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    publisher = "Elsevier",

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    Fully differential cryogenic transistor amplifier. / Beev, Nikolay (Corresponding Author); Kiviranta, Mikko.

    In: Cryogenics, Vol. 57, 2013, p. 129-133.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Fully differential cryogenic transistor amplifier

    AU - Beev, Nikolay

    AU - Kiviranta, Mikko

    PY - 2013

    Y1 - 2013

    N2 - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

    AB - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

    KW - low-noice apmplifier

    KW - SIGe transistors

    KW - SQUID readout

    U2 - 10.1016/j.cryogenics.2013.06.004

    DO - 10.1016/j.cryogenics.2013.06.004

    M3 - Article

    VL - 57

    SP - 129

    EP - 133

    JO - Cryogenics

    JF - Cryogenics

    SN - 0011-2275

    ER -