Fully differential cryogenic transistor amplifier

Nikolay Beev (Corresponding Author), Mikko Kiviranta

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.
Original languageEnglish
Pages (from-to)129-133
Number of pages4
JournalCryogenics
Volume57
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

transistor amplifiers
Cryogenics
cryogenics
Transistors
amplifiers
SQUIDs
Bandwidth
bandwidth
Differential amplifiers
Tunnel junctions
differential amplifiers
superconducting devices
interference
Temperature
noise temperature
tunnel junctions
Fluxes
Detectors
readout
baths

Keywords

  • low-noice apmplifier
  • SIGe transistors
  • SQUID readout

Cite this

Beev, Nikolay ; Kiviranta, Mikko. / Fully differential cryogenic transistor amplifier. In: Cryogenics. 2013 ; Vol. 57. pp. 129-133.
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title = "Fully differential cryogenic transistor amplifier",
abstract = "We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.",
keywords = "low-noice apmplifier, SIGe transistors, SQUID readout",
author = "Nikolay Beev and Mikko Kiviranta",
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Fully differential cryogenic transistor amplifier. / Beev, Nikolay (Corresponding Author); Kiviranta, Mikko.

In: Cryogenics, Vol. 57, 2013, p. 129-133.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fully differential cryogenic transistor amplifier

AU - Beev, Nikolay

AU - Kiviranta, Mikko

PY - 2013

Y1 - 2013

N2 - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

AB - We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K–300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN ≈ 0.7 K at RS ≈ 5 kΩ and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 μW, has noise temperature TN ≈ 2 K at RS ≈ 25 kΩ and >2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and <8 × 10−8 Φ0/Hz1/2 flux noise.

KW - low-noice apmplifier

KW - SIGe transistors

KW - SQUID readout

U2 - 10.1016/j.cryogenics.2013.06.004

DO - 10.1016/j.cryogenics.2013.06.004

M3 - Article

VL - 57

SP - 129

EP - 133

JO - Cryogenics

JF - Cryogenics

SN - 0011-2275

ER -