Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 8-14 |
| Number of pages | 7 |
| Journal | Organic Electronics |
| Volume | 20 |
| DOIs | |
| Publication status | Published - 2015 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- roll-to-roll
- etching
- gravue printing
- screen printing
- organic transistor
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Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning. / Vilkman, Marja (Corresponding Author); Hassinen, Tomi; Keränen, Mikko; Pretot, Roger; van der Schaaf, Paul; Ruotsalainen, Teemu; Sandberg, Henrik GO.
In: Organic Electronics, Vol. 20, 2015, p. 8-14.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning
AU - Vilkman, Marja
AU - Hassinen, Tomi
AU - Keränen, Mikko
AU - Pretot, Roger
AU - van der Schaaf, Paul
AU - Ruotsalainen, Teemu
AU - Sandberg, Henrik GO
N1 - Project code: 88901
PY - 2015
Y1 - 2015
N2 - We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (
AB - We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (
KW - roll-to-roll
KW - etching
KW - gravue printing
KW - screen printing
KW - organic transistor
U2 - 10.1016/j.orgel.2015.01.031
DO - 10.1016/j.orgel.2015.01.031
M3 - Article
VL - 20
SP - 8
EP - 14
JO - Organic Electronics
JF - Organic Electronics
SN - 1566-1199
ER -