Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning

Marja Vilkman (Corresponding Author), Tomi Hassinen, Mikko Keränen, Roger Pretot, Paul van der Schaaf, Teemu Ruotsalainen, Henrik GO Sandberg

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (
Original languageEnglish
Pages (from-to)8-14
Number of pages7
JournalOrganic Electronics
Volume20
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

etchants
Printing
Etching
Transistors
transistors
Silver
Ink
Electrodes
electrodes
printing
Semiconducting polymers
Screen printing
Ointments
Leakage currents
etching
inks
Block copolymers
Throughput
Semiconductor materials
silver

Keywords

  • roll-to-roll
  • etching
  • gravue printing
  • screen printing
  • organic transistor

Cite this

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title = "Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning",
abstract = "We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (",
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author = "Marja Vilkman and Tomi Hassinen and Mikko Ker{\"a}nen and Roger Pretot and {van der Schaaf}, Paul and Teemu Ruotsalainen and Sandberg, {Henrik GO}",
note = "Project code: 88901",
year = "2015",
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Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning. / Vilkman, Marja (Corresponding Author); Hassinen, Tomi; Keränen, Mikko; Pretot, Roger; van der Schaaf, Paul; Ruotsalainen, Teemu; Sandberg, Henrik GO.

In: Organic Electronics, Vol. 20, 2015, p. 8-14.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Fully roll-to-roll processed organic top gate transistors using a printable etchant for bottom electrode patterning

AU - Vilkman, Marja

AU - Hassinen, Tomi

AU - Keränen, Mikko

AU - Pretot, Roger

AU - van der Schaaf, Paul

AU - Ruotsalainen, Teemu

AU - Sandberg, Henrik GO

N1 - Project code: 88901

PY - 2015

Y1 - 2015

N2 - We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (

AB - We demonstrate a high throughput roll-to-roll process for preparing organic top gate transistors with metallic electrodes on a flexible substrate. The source and drain electrodes are prepared by patterning a roll-to-roll evaporated silver layer with a printable etchant. The etching step is done by a screen printing process with a novel triblock copolymer based etching ink, which enables etching in just a few seconds at low temperatures. The method allows 100 µm resolution in the roll process and can produce thin (35 nm), smooth and nonporous electrodes with high conductivity. In addition, the process is independent on the printing direction and area, providing freedom of design. The polymeric semiconductor and insulator layers are deposited with roll-to-roll gravure printing, which allows orientation - and thus performance - of the semiconducting polymer to be controlled by the cup size and printing direction. The gate is printed with rotary screen, using a solvent-free silver paste as the ink. The properties of the prepared organic transistors are typical for fully printed devices: mobility of 0.017-0.026 cm2/(V s) and ON/OFF-ratio of 102-103 were reached and the leakage current was very low (

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