G-band distributed microelectromechanical components based on CMOS compatible fabrication

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)

Abstract

Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.
Original languageEnglish
Pages (from-to)720 - 728
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume56
Issue number3
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

microelectromechanical systems
MEMS
CMOS
Fabrication
fabrication
Surface micromachining
micromachining
transmission lines
Electric lines
capacitors
Capacitors

Keywords

  • $G$-band
  • CMOS
  • RF MEMS
  • microelectromechanical systems
  • MEMS
  • varactor

Cite this

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title = "G-band distributed microelectromechanical components based on CMOS compatible fabrication",
abstract = "Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.",
keywords = "$G$-band, CMOS, RF MEMS, microelectromechanical systems, MEMS, varactor",
author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Mari Yl{\"o}nen",
year = "2008",
doi = "10.1109/TMTT.2008.916885",
language = "English",
volume = "56",
pages = "720 -- 728",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
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}

G-band distributed microelectromechanical components based on CMOS compatible fabrication. / Vähä-Heikkilä, Tauno; Ylönen, Mari.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 3, 2008, p. 720 - 728.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - G-band distributed microelectromechanical components based on CMOS compatible fabrication

AU - Vähä-Heikkilä, Tauno

AU - Ylönen, Mari

PY - 2008

Y1 - 2008

N2 - Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

AB - Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

KW - $G$-band

KW - CMOS

KW - RF MEMS

KW - microelectromechanical systems

KW - MEMS

KW - varactor

U2 - 10.1109/TMTT.2008.916885

DO - 10.1109/TMTT.2008.916885

M3 - Article

VL - 56

SP - 720

EP - 728

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 3

ER -