G-band distributed microelectromechanical components based on CMOS compatible fabrication

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Abstract

Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.
Original languageEnglish
Pages (from-to)720 - 728
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume56
Issue number3
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

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Keywords

  • $G$-band
  • CMOS
  • RF MEMS
  • microelectromechanical systems
  • MEMS
  • varactor

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