G-band distributed microelectromechanical components based on CMOS compatible fabrication

Tauno Vähä-Heikkilä; Mari Ylönen

doi:10.1109/TMTT.2008.916885

G-band distributed microelectromechanical components based on CMOS compatible fabrication

Tauno Vähä-Heikkilä, Mari Ylönen

Research output: Contribution to journal › Article › Scientific › peer-review

19 Citations (Scopus)

Abstract

Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

Original language	English
Pages (from-to)	720 - 728
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	56
Issue number	3
DOIs	https://doi.org/10.1109/TMTT.2008.916885
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

$G$-band
CMOS
RF MEMS
microelectromechanical systems
MEMS
varactor

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TMTT.2008.916885

Cite this

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title = "G-band distributed microelectromechanical components based on CMOS compatible fabrication",

abstract = "Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.",

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author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Mari Yl{\"o}nen",

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doi = "10.1109/TMTT.2008.916885",

language = "English",

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T1 - G-band distributed microelectromechanical components based on CMOS compatible fabrication

AU - Vähä-Heikkilä, Tauno

AU - Ylönen, Mari

PY - 2008

Y1 - 2008

N2 - Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

AB - Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

KW - $G$-band

KW - CMOS

KW - RF MEMS

KW - microelectromechanical systems

KW - MEMS

KW - varactor

U2 - 10.1109/TMTT.2008.916885

DO - 10.1109/TMTT.2008.916885

M3 - Article

SN - 0018-9480

VL - 56

SP - 720

EP - 728

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 3

ER -

G-band distributed microelectromechanical components based on CMOS compatible fabrication

Abstract

Keywords

UN SDGs

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