@inbook{5f134828c385449a8c5d1761916375ee,
title = "Ga-vacancy activation under low energy electron irradiation in GaN-based materials",
abstract = "We present results on optical degradation of gallium nitride based materials under low energy electron beam irradiation (LEEBI). GaN thin film and GaN/InGaN quantum well samples, grown by metal-organic vapor phase epitaxy (MOVPE), were exposed to a tightly focused ({\o} = 2 nm, J = 0-130 kA/cm2), rapidly scanning electron beam (e-beam) with energy of 5-20 keV and dose of 0-500 μC/cm2. The irradiation severely reduced the band-to-band photoluminescence of the exposed sample areas. Performing positron annihilation spectroscopy measurements on the irradiated films revealed an important increase of Ga-vacancy concentration as a function of the irradiation dose. Based on the measurements we propose that in-grown passive VGa-Hn complexes are present in MOVPE grown GaN (and its alloys), and are activated by LEEBI.",
keywords = "electron irradiation;, III-V;, scanning electron microscopy (SEM)",
author = "Henri Nyk{\"a}nen and Sami Suihkonen and Lukaz Kilanski and Markku Sopanen and Filip Tuomisto",
year = "2012",
doi = "10.1557/opl.2012.782",
language = "English",
volume = "1432",
series = "MRS Online Proceedings ",
publisher = "University of Cambridge",
pages = "g05--05--ii06--05",
booktitle = "MRS Proceedings",
address = "United Kingdom",
}