GaAs douple heterostructure step recovery diode

Ao Fang; Anssi Hovinen; Markku Taskinen; Jian Zang; Pekka Kuivalainen; Antti Räisänen

doi:10.1238/Physica.Topical.079a00334

GaAs douple heterostructure step recovery diode

Ao Fang, Anssi Hovinen, Markku Taskinen, Jian Zang, Pekka Kuivalainen, Antti Räisänen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded Al_xGa_1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.

Original language	English
Pages (from-to)	334-336
Journal	Physica Scripta
Volume	T79
DOIs	https://doi.org/10.1238/Physica.Topical.079a00334
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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title = "GaAs douple heterostructure step recovery diode",

abstract = "We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0{\`E}0.15) intrinsic layers. The III{\`E}V compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.",

author = "Ao Fang and Anssi Hovinen and Markku Taskinen and Jian Zang and Pekka Kuivalainen and Antti R{\"a}is{\"a}nen",

year = "1999",

doi = "10.1238/Physica.Topical.079a00334",

language = "English",

volume = "T79",

pages = "334--336",

journal = "Physica Scripta",

issn = "0281-1847",

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TY - JOUR

T1 - GaAs douple heterostructure step recovery diode

AU - Fang, Ao

AU - Hovinen, Anssi

AU - Taskinen, Markku

AU - Zang, Jian

AU - Kuivalainen, Pekka

AU - Räisänen, Antti

PY - 1999

Y1 - 1999

N2 - We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.

AB - We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.

U2 - 10.1238/Physica.Topical.079a00334

DO - 10.1238/Physica.Topical.079a00334

M3 - Article

SN - 0281-1847

VL - T79

SP - 334

EP - 336

JO - Physica Scripta

JF - Physica Scripta

ER -

GaAs douple heterostructure step recovery diode

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