GaAs douple heterostructure step recovery diode

Ao Fang, Anssi Hovinen, Markku Taskinen, Jian Zang, Pekka Kuivalainen, Antti Räisänen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.
Original languageEnglish
Pages (from-to)334-336
Number of pages3
JournalPhysica Scripta
VolumeT79
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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step recovery diodes
Heterostructures
Gallium Arsenide
Diode
Recovery
diodes
Contact
Heterojunction
Epitaxy
mesas
Capacitance
vapor phase epitaxy
heterojunctions
Reverse
Semiconductors
electric contacts
High Speed
Metals
capacitance
high speed

Cite this

Fang, A., Hovinen, A., Taskinen, M., Zang, J., Kuivalainen, P., & Räisänen, A. (1999). GaAs douple heterostructure step recovery diode. Physica Scripta, T79, 334-336. https://doi.org/10.1238/Physica.Topical.079a00334
Fang, Ao ; Hovinen, Anssi ; Taskinen, Markku ; Zang, Jian ; Kuivalainen, Pekka ; Räisänen, Antti. / GaAs douple heterostructure step recovery diode. In: Physica Scripta. 1999 ; Vol. T79. pp. 334-336.
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author = "Ao Fang and Anssi Hovinen and Markku Taskinen and Jian Zang and Pekka Kuivalainen and Antti R{\"a}is{\"a}nen",
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Fang, A, Hovinen, A, Taskinen, M, Zang, J, Kuivalainen, P & Räisänen, A 1999, 'GaAs douple heterostructure step recovery diode', Physica Scripta, vol. T79, pp. 334-336. https://doi.org/10.1238/Physica.Topical.079a00334

GaAs douple heterostructure step recovery diode. / Fang, Ao; Hovinen, Anssi; Taskinen, Markku; Zang, Jian; Kuivalainen, Pekka; Räisänen, Antti.

In: Physica Scripta, Vol. T79, 1999, p. 334-336.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - GaAs douple heterostructure step recovery diode

AU - Fang, Ao

AU - Hovinen, Anssi

AU - Taskinen, Markku

AU - Zang, Jian

AU - Kuivalainen, Pekka

AU - Räisänen, Antti

PY - 1999

Y1 - 1999

N2 - We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.

AB - We have designed and fabricated high speed double heterostructure step recovery diodes based on heterojunctions and graded AlxGa1~xAs/GaAs(x \ 0È0.15) intrinsic layers. The IIIÈV compound semiconductor layers were grown by using MOVPE (Metal Organic Vapor Phase Epitaxy) technique, whereafter the diode structure was mesa etched. The ohmic contacts were made by using Ti/Au layers on the front contact and Ni/AuGe/Ni/Au layers on the backside. The measured ideality factor of the diode was 1.95, and the capacitance under forward bias was 108 pF, and 0.9 pF under reverse bias. The measured transition time was 50 ps.

U2 - 10.1238/Physica.Topical.079a00334

DO - 10.1238/Physica.Topical.079a00334

M3 - Article

VL - T79

SP - 334

EP - 336

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -

Fang A, Hovinen A, Taskinen M, Zang J, Kuivalainen P, Räisänen A. GaAs douple heterostructure step recovery diode. Physica Scripta. 1999;T79:334-336. https://doi.org/10.1238/Physica.Topical.079a00334