Abstract
A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial
GaAs material was successfully fabricated. The mesa type GaAs sensor
with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm
for the all-epitaxial sensor element is achieved by back-thinning
procedure. The sensor element is bump bonded to a Medipix2 read-out
ASIC. The detector is capable of room temperature spectroscopic
operation and it demonstrates the potential of GaAs for high resolution
X-ray imaging systems operating at room temperature. This work describes
the manufacturing process and electrical properties of the GaAs
Medipix2 hybrid detector.
Original language | English |
---|---|
Pages (from-to) | 174-177 |
Journal | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 591 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 |
MoE publication type | A1 Journal article-refereed |
Keywords
- GaAs
- Medipix2
- X-ray imaging