A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.
|Journal||Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 2008|
|MoE publication type||A1 Journal article-refereed|
- X-ray imaging
Kostamo, P., Nenonen, S., Vähänen, S., Tlustos, L., Fröjdh, C., Campbell, M., Zhilyaev, Y., & Lipsanen, H. (2008). GaAs Medipix2 hybrid pixel detector. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591(1), 174-177. https://doi.org/10.1016/j.nima.2008.03.050