GaAs Medipix2 hybrid pixel detector

Pasi Kostamo; Seppo Nenonen; Sami Vähänen; Lukas Tlustos; Christer Fröjdh; Michael Campbell; Yuri Zhilyaev; Harri Lipsanen

doi:10.1016/j.nima.2008.03.050

GaAs Medipix2 hybrid pixel detector

Pasi Kostamo (Corresponding Author), Seppo Nenonen, Sami Vähänen, Lukas Tlustos, Christer Fröjdh, Michael Campbell, Yuri Zhilyaev, Harri Lipsanen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm² was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

Original language	English
Pages (from-to)	174-177
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	591
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2008.03.050
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

GaAs
Medipix2
X-ray imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nima.2008.03.050

Cite this

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abstract = "A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.",

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doi = "10.1016/j.nima.2008.03.050",

language = "English",

volume = "591",

pages = "174--177",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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TY - JOUR

T1 - GaAs Medipix2 hybrid pixel detector

AU - Kostamo, Pasi

AU - Nenonen, Seppo

AU - Vähänen, Sami

AU - Tlustos, Lukas

AU - Fröjdh, Christer

AU - Campbell, Michael

AU - Zhilyaev, Yuri

AU - Lipsanen, Harri

PY - 2008

Y1 - 2008

N2 - A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

AB - A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

KW - GaAs

KW - Medipix2

KW - X-ray imaging

U2 - 10.1016/j.nima.2008.03.050

DO - 10.1016/j.nima.2008.03.050

M3 - Article

SN - 0168-9002

VL - 591

SP - 174

EP - 177

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

GaAs Medipix2 hybrid pixel detector

Abstract

Keywords

UN SDGs

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