GaAs Medipix2 hybrid pixel detector

Pasi Kostamo; Seppo Nenonen; Sami Vähänen; Lukas Tlustos; Christer Fröjdh; Michael Campbell; Yuri Zhilyaev; Harri Lipsanen

doi:10.1016/j.nima.2008.03.050

GaAs Medipix2 hybrid pixel detector

Pasi Kostamo^*, Seppo Nenonen, Sami Vähänen, Lukas Tlustos, Christer Fröjdh, Michael Campbell, Yuri Zhilyaev, Harri Lipsanen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm² was made of a 140-µm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 µm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

Original language	English
Pages (from-to)	174-177
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	591
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2008.03.050
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

GaAs
Medipix2
X-ray imaging

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nima.2008.03.050

Cite this

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title = "GaAs Medipix2 hybrid pixel detector",

abstract = "A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-µm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 µm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.",

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author = "Pasi Kostamo and Seppo Nenonen and Sami V{\"a}h{\"a}nen and Lukas Tlustos and Christer Fr{\"o}jdh and Michael Campbell and Yuri Zhilyaev and Harri Lipsanen",

year = "2008",

doi = "10.1016/j.nima.2008.03.050",

language = "English",

volume = "591",

pages = "174--177",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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TY - JOUR

T1 - GaAs Medipix2 hybrid pixel detector

AU - Kostamo, Pasi

AU - Nenonen, Seppo

AU - Vähänen, Sami

AU - Tlustos, Lukas

AU - Fröjdh, Christer

AU - Campbell, Michael

AU - Zhilyaev, Yuri

AU - Lipsanen, Harri

PY - 2008

Y1 - 2008

N2 - A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-µm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 µm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

AB - A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-µm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 µm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

KW - GaAs

KW - Medipix2

KW - X-ray imaging

U2 - 10.1016/j.nima.2008.03.050

DO - 10.1016/j.nima.2008.03.050

M3 - Article

SN - 0168-9002

VL - 591

SP - 174

EP - 177

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

GaAs Medipix2 hybrid pixel detector

Abstract

Keywords

UN SDGs

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