GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

Gintare Statkute (Corresponding Author), Albert G. Nasibulin, Markku Sopanen, Teppo Hakkarainen, Esko I. Kauppinen, Harri Lipsanen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.
Original languageEnglish
Article number020213
JournalJapanese Journal of Applied Physics
Volume49
Issue number2
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fingerprint

Nanowires
nanowires
Silica
silicon dioxide
Metallorganic chemical vapor deposition
Substrates
Crystallites
crystallites
metalorganic chemical vapor deposition
electron energy
Crystalline materials
Transmission electron microscopy
Oxidation
transmission electron microscopy
Scanning electron microscopy
oxidation
scanning electron microscopy
spectroscopy
x rays
Hot Temperature

Cite this

Statkute, G., Nasibulin, A. G., Sopanen, M., Hakkarainen, T., Kauppinen, E. I., & Lipsanen, H. (2010). GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors. Japanese Journal of Applied Physics, 49(2), [020213]. https://doi.org/10.1143/JJAP.49.020213
Statkute, Gintare ; Nasibulin, Albert G. ; Sopanen, Markku ; Hakkarainen, Teppo ; Kauppinen, Esko I. ; Lipsanen, Harri. / GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 2.
@article{7c34c027c7ac4df49b9e93b3e8563288,
title = "GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors",
abstract = "GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.",
author = "Gintare Statkute and Nasibulin, {Albert G.} and Markku Sopanen and Teppo Hakkarainen and Kauppinen, {Esko I.} and Harri Lipsanen",
year = "2010",
doi = "10.1143/JJAP.49.020213",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2",

}

Statkute, G, Nasibulin, AG, Sopanen, M, Hakkarainen, T, Kauppinen, EI & Lipsanen, H 2010, 'GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors', Japanese Journal of Applied Physics, vol. 49, no. 2, 020213. https://doi.org/10.1143/JJAP.49.020213

GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors. / Statkute, Gintare (Corresponding Author); Nasibulin, Albert G.; Sopanen, Markku; Hakkarainen, Teppo; Kauppinen, Esko I.; Lipsanen, Harri.

In: Japanese Journal of Applied Physics, Vol. 49, No. 2, 020213, 2010.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

AU - Statkute, Gintare

AU - Nasibulin, Albert G.

AU - Sopanen, Markku

AU - Hakkarainen, Teppo

AU - Kauppinen, Esko I.

AU - Lipsanen, Harri

PY - 2010

Y1 - 2010

N2 - GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.

AB - GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.

U2 - 10.1143/JJAP.49.020213

DO - 10.1143/JJAP.49.020213

M3 - Article

VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 2

M1 - 020213

ER -