GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.
Statkute, G., Nasibulin, A. G., Sopanen, M., Hakkarainen, T., Kauppinen, E. I., & Lipsanen, H. (2010). GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors. Japanese Journal of Applied Physics, 49(2), . https://doi.org/10.1143/JJAP.49.020213