GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

Gintare Statkute; Albert G. Nasibulin; Markku Sopanen; Teppo Hakkarainen; Esko I. Kauppinen; Harri Lipsanen

doi:10.1143/JJAP.49.020213

GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

Gintare Statkute (Corresponding Author), Albert G. Nasibulin, Markku Sopanen, Teppo Hakkarainen, Esko I. Kauppinen, Harri Lipsanen

VTT Technical Research Centre of Finland

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.

Original language	English
Article number	020213
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.49.020213
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

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10.1143/JJAP.49.020213

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@article{7c34c027c7ac4df49b9e93b3e8563288,

title = "GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors",

abstract = "GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.",

author = "Gintare Statkute and Nasibulin, {Albert G.} and Markku Sopanen and Teppo Hakkarainen and Kauppinen, {Esko I.} and Harri Lipsanen",

year = "2010",

doi = "10.1143/JJAP.49.020213",

language = "English",

volume = "49",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

AU - Statkute, Gintare

AU - Nasibulin, Albert G.

AU - Sopanen, Markku

AU - Hakkarainen, Teppo

AU - Kauppinen, Esko I.

AU - Lipsanen, Harri

PY - 2010

Y1 - 2010

N2 - GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.

AB - GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.

U2 - 10.1143/JJAP.49.020213

DO - 10.1143/JJAP.49.020213

M3 - Article

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2

M1 - 020213

ER -

GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

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