GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

Gintare Statkute (Corresponding Author), Albert G. Nasibulin, Markku Sopanen, Teppo Hakkarainen, Esko I. Kauppinen, Harri Lipsanen

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2 Citations (Scopus)

Abstract

GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.
Original languageEnglish
Article number020213
JournalJapanese Journal of Applied Physics
Volume49
Issue number2
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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    Statkute, G., Nasibulin, A. G., Sopanen, M., Hakkarainen, T., Kauppinen, E. I., & Lipsanen, H. (2010). GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors. Japanese Journal of Applied Physics, 49(2), [020213]. https://doi.org/10.1143/JJAP.49.020213