Abstract
We present a concept where GaAs chips with dilute nitride
and quantum dot optoelectronics are hybrid integrated on
a silicon-on-insulator (SOI) waveguide platform and
packaged into low-cost modules using silicon as the
packaging material. The approach aims to offer high
energy efficiency, low cost and high bandwidth for
optical interconnects operating at 1.2-1.3 µm
wavelengths. It presents technologies that could bridge
the gap between long and short range optical
communication, which are presently based on incompatible
wavelength ranges and waveguiding technologies (single
vs. multimode). (20 refs.)
Original language | English |
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Title of host publication | Integrated Optics: Devices, Materials, and Technologies XV |
Editors | Jean-Emmanue Broquin |
Place of Publication | USA |
Publisher | International Society for Optics and Photonics SPIE |
Number of pages | 8 |
ISBN (Print) | 978-0-8194-8478-9 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A4 Article in a conference publication |
Event | Integrated Optics: Devices, Materials, and Technologies XV. SPIE OPTO - San Francisco, CA, United States Duration: 24 Jan 2011 → 26 Jan 2011 |
Publication series
Series | Proceedings of SPIE |
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Volume | 7941 |
Conference
Conference | Integrated Optics: Devices, Materials, and Technologies XV. SPIE OPTO |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 24/01/11 → 26/01/11 |