Abstract
We present a concept where GaAs chips with dilute nitride
and quantum dot optoelectronics are hybrid integrated on
a silicon-on-insulator (SOI) waveguide platform and
packaged into low-cost modules using silicon as the
packaging material. The approach aims to offer high
energy efficiency, low cost and high bandwidth for
optical interconnects operating at 1.2-1.3 µm
wavelengths. It presents technologies that could bridge
the gap between long and short range optical
communication, which are presently based on incompatible
wavelength ranges and waveguiding technologies (single
vs. multimode). (20 refs.)
| Original language | English |
|---|---|
| Title of host publication | Integrated Optics: Devices, Materials, and Technologies XV |
| Editors | Jean-Emmanue Broquin |
| Place of Publication | USA |
| Publisher | International Society for Optics and Photonics SPIE |
| Number of pages | 8 |
| ISBN (Print) | 978-0-8194-8478-9 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A4 Article in a conference publication |
| Event | Integrated Optics: Devices, Materials, and Technologies XV. SPIE OPTO - San Francisco, CA, United States Duration: 24 Jan 2011 → 26 Jan 2011 |
Publication series
| Series | Proceedings of SPIE |
|---|---|
| Volume | 7941 |
Conference
| Conference | Integrated Optics: Devices, Materials, and Technologies XV. SPIE OPTO |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 24/01/11 → 26/01/11 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
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