GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation

Ch Ravi Kumar; T. S. Abhilash; B. P.C. Rao; T. Jayakumar; G. Rajaram

doi:10.3233/978-1-60750-968-4-241

GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation

Ch Ravi Kumar, T. S. Abhilash, B. P.C. Rao, T. Jayakumar, G. Rajaram

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

Hall sensors are fabricated from GaAs/AlGaAs based heterostructures. The sensors are characterized for sensitivity using A.C and D.C. excitation techniques w.r.to a known magnetic field in the range of 0-100Oe. Sensitivities of the order of 1000V/AT are obtained with a low variation of 0.15% in the temperature range of 30°C-100°C. A.C excitation (30Hz to 1 kHz) for the sensor current and phase-sensitive detection of the Hall Voltage are used to eliminate thermo-emfs and its drift with a consequent improvement in data acquisition rates of >50% over that of D.C excitation. This improves scan rates in applications such as magnetic flux leakage (MFL) measurements. The sensitivity is independent of the frequency of excitation as expected; however, the zero-field Hall voltage 'offset' value is found to have small frequency dependence.

Original language	English
Title of host publication	Electromagnetic Nondestructive Evaluation (XV)
Editors	B.P.C. Rao, T. Jayakumar, Baldev Raj, Krishnan Balasubramanian
Publisher	IOS Press
Pages	241-246
Number of pages	6
ISBN (Print)	978-160750967-7
DOIs	https://doi.org/10.3233/978-1-60750-968-4-241
Publication status	Published - 2012
MoE publication type	Not Eligible

Publication series

Series	Studies in Applied Electromagnetics and Mechanics
Volume	36
ISSN	1383-7281

Keywords

A.C. excitation
GaAs/AlGaAs
Hall sensor
Magnetic Flux Leakage

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Ravi Kumar, C., Abhilash, T. S., Rao, B. P. C., Jayakumar, T., & Rajaram, G. (2012). GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation. In B. P. C. Rao, T. Jayakumar, B. Raj, & K. Balasubramanian (Eds.), Electromagnetic Nondestructive Evaluation (XV) (pp. 241-246). IOS Press. Studies in Applied Electromagnetics and Mechanics Vol. 36 https://doi.org/10.3233/978-1-60750-968-4-241

Ravi Kumar, Ch ; Abhilash, T. S. ; Rao, B. P.C. ; Jayakumar, T. ; Rajaram, G. / GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation. Electromagnetic Nondestructive Evaluation (XV). editor / B.P.C. Rao ; T. Jayakumar ; Baldev Raj ; Krishnan Balasubramanian. IOS Press, 2012. pp. 241-246 (Studies in Applied Electromagnetics and Mechanics, Vol. 36).

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abstract = "Hall sensors are fabricated from GaAs/AlGaAs based heterostructures. The sensors are characterized for sensitivity using A.C and D.C. excitation techniques w.r.to a known magnetic field in the range of 0-100Oe. Sensitivities of the order of 1000V/AT are obtained with a low variation of 0.15% in the temperature range of 30°C-100°C. A.C excitation (30Hz to 1 kHz) for the sensor current and phase-sensitive detection of the Hall Voltage are used to eliminate thermo-emfs and its drift with a consequent improvement in data acquisition rates of >50% over that of D.C excitation. This improves scan rates in applications such as magnetic flux leakage (MFL) measurements. The sensitivity is independent of the frequency of excitation as expected; however, the zero-field Hall voltage 'offset' value is found to have small frequency dependence.",

keywords = "A.C. excitation, GaAs/AlGaAs, Hall sensor, Magnetic Flux Leakage",

author = "{Ravi Kumar}, Ch and Abhilash, {T. S.} and Rao, {B. P.C.} and T. Jayakumar and G. Rajaram",

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Ravi Kumar, C, Abhilash, TS, Rao, BPC, Jayakumar, T & Rajaram, G 2012, GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation. in BPC Rao, T Jayakumar, B Raj & K Balasubramanian (eds), Electromagnetic Nondestructive Evaluation (XV). IOS Press, Studies in Applied Electromagnetics and Mechanics, vol. 36, pp. 241-246. https://doi.org/10.3233/978-1-60750-968-4-241

GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation. / Ravi Kumar, Ch; Abhilash, T. S.; Rao, B. P.C.; Jayakumar, T.; Rajaram, G.

Electromagnetic Nondestructive Evaluation (XV). ed. / B.P.C. Rao; T. Jayakumar; Baldev Raj; Krishnan Balasubramanian. IOS Press, 2012. p. 241-246 (Studies in Applied Electromagnetics and Mechanics, Vol. 36).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

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AU - Ravi Kumar, Ch

AU - Abhilash, T. S.

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AU - Jayakumar, T.

AU - Rajaram, G.

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N2 - Hall sensors are fabricated from GaAs/AlGaAs based heterostructures. The sensors are characterized for sensitivity using A.C and D.C. excitation techniques w.r.to a known magnetic field in the range of 0-100Oe. Sensitivities of the order of 1000V/AT are obtained with a low variation of 0.15% in the temperature range of 30°C-100°C. A.C excitation (30Hz to 1 kHz) for the sensor current and phase-sensitive detection of the Hall Voltage are used to eliminate thermo-emfs and its drift with a consequent improvement in data acquisition rates of >50% over that of D.C excitation. This improves scan rates in applications such as magnetic flux leakage (MFL) measurements. The sensitivity is independent of the frequency of excitation as expected; however, the zero-field Hall voltage 'offset' value is found to have small frequency dependence.

AB - Hall sensors are fabricated from GaAs/AlGaAs based heterostructures. The sensors are characterized for sensitivity using A.C and D.C. excitation techniques w.r.to a known magnetic field in the range of 0-100Oe. Sensitivities of the order of 1000V/AT are obtained with a low variation of 0.15% in the temperature range of 30°C-100°C. A.C excitation (30Hz to 1 kHz) for the sensor current and phase-sensitive detection of the Hall Voltage are used to eliminate thermo-emfs and its drift with a consequent improvement in data acquisition rates of >50% over that of D.C excitation. This improves scan rates in applications such as magnetic flux leakage (MFL) measurements. The sensitivity is independent of the frequency of excitation as expected; however, the zero-field Hall voltage 'offset' value is found to have small frequency dependence.

KW - A.C. excitation

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BT - Electromagnetic Nondestructive Evaluation (XV)

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PB - IOS Press

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Ravi Kumar C, Abhilash TS, Rao BPC, Jayakumar T, Rajaram G. GaAs/AlGaAs heterostructure based micro-hall sensors and response to A.C. excitation. In Rao BPC, Jayakumar T, Raj B, Balasubramanian K, editors, Electromagnetic Nondestructive Evaluation (XV). IOS Press. 2012. p. 241-246. (Studies in Applied Electromagnetics and Mechanics, Vol. 36). https://doi.org/10.3233/978-1-60750-968-4-241