GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto, H. P. Kattelus, J. Saarilahti, I. Suni

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

    Original languageEnglish
    Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages169-172
    Number of pages4
    ISBN (Print)0-387-51000-1
    DOIs
    Publication statusPublished - 1 Jan 1989
    MoE publication typeA4 Article in a conference publication
    Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
    Duration: 11 Sep 198914 Sep 1989

    Conference

    Conference19th European Solid State Device Research Conference, ESSDERC 1989
    CountryGermany
    CityBerlin
    Period11/09/8914/09/89

    Fingerprint

    Atomic layer epitaxy
    Gallium arsenide
    Semiconductor quantum wells
    Heterojunctions
    Indium arsenide
    Gallium
    Full width at half maximum
    Indium
    Crystalline materials

    Cite this

    Ahopelto, J., Kattelus, H. P., Saarilahti, J., & Suni, I. (1989). GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 169-172). [5436640] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1007/978-3-642-52314-4_34
    Ahopelto, J. ; Kattelus, H. P. ; Saarilahti, J. ; Suni, I. / GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1989. pp. 169-172
    @inproceedings{f5e85409b1ef4ca4b7e8c923b09eb6ec,
    title = "GaAs/InAs heterostructures grown by Atomic Layer Epitaxy",
    abstract = "Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 {\%} for GaAs layers and 15 {\%} for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.",
    author = "J. Ahopelto and Kattelus, {H. P.} and J. Saarilahti and I. Suni",
    year = "1989",
    month = "1",
    day = "1",
    doi = "10.1007/978-3-642-52314-4_34",
    language = "English",
    isbn = "0-387-51000-1",
    pages = "169--172",
    booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Ahopelto, J, Kattelus, HP, Saarilahti, J & Suni, I 1989, GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436640, IEEE Institute of Electrical and Electronic Engineers , pp. 169-172, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_34

    GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. / Ahopelto, J.; Kattelus, H. P.; Saarilahti, J.; Suni, I.

    ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1989. p. 169-172 5436640.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

    AU - Ahopelto, J.

    AU - Kattelus, H. P.

    AU - Saarilahti, J.

    AU - Suni, I.

    PY - 1989/1/1

    Y1 - 1989/1/1

    N2 - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

    AB - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

    UR - http://www.scopus.com/inward/record.url?scp=84907834063&partnerID=8YFLogxK

    U2 - 10.1007/978-3-642-52314-4_34

    DO - 10.1007/978-3-642-52314-4_34

    M3 - Conference article in proceedings

    AN - SCOPUS:84907834063

    SN - 0-387-51000-1

    SP - 169

    EP - 172

    BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Ahopelto J, Kattelus HP, Saarilahti J, Suni I. GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers . 1989. p. 169-172. 5436640 https://doi.org/10.1007/978-3-642-52314-4_34