GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto, H. P. Kattelus, J. Saarilahti, I. Suni

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

    Original languageEnglish
    Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages169-172
    Number of pages4
    ISBN (Print)0-387-51000-1
    DOIs
    Publication statusPublished - 1 Jan 1989
    MoE publication typeA4 Article in a conference publication
    Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
    Duration: 11 Sep 198914 Sep 1989

    Conference

    Conference19th European Solid State Device Research Conference, ESSDERC 1989
    CountryGermany
    CityBerlin
    Period11/09/8914/09/89

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