Abstract
Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.
Original language | English |
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Title of host publication | ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 169-172 |
Number of pages | 4 |
ISBN (Print) | 0-387-51000-1 |
DOIs | |
Publication status | Published - 1 Jan 1989 |
MoE publication type | A4 Article in a conference publication |
Event | 19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sept 1989 → 14 Sept 1989 |
Conference
Conference | 19th European Solid State Device Research Conference, ESSDERC 1989 |
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Country/Territory | Germany |
City | Berlin |
Period | 11/09/89 → 14/09/89 |