Abstract
Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.
| Original language | English |
|---|---|
| Title of host publication | ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 169-172 |
| Number of pages | 4 |
| ISBN (Print) | 0-387-51000-1 |
| DOIs | |
| Publication status | Published - 1 Jan 1989 |
| MoE publication type | A4 Article in a conference publication |
| Event | 19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sep 1989 → 14 Sep 1989 |
Conference
| Conference | 19th European Solid State Device Research Conference, ESSDERC 1989 |
|---|---|
| Country | Germany |
| City | Berlin |
| Period | 11/09/89 → 14/09/89 |
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GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. / Ahopelto, J.; Kattelus, H. P.; Saarilahti, J.; Suni, I.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1989. p. 169-172 5436640.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - GaAs/InAs heterostructures grown by Atomic Layer Epitaxy
AU - Ahopelto, J.
AU - Kattelus, H. P.
AU - Saarilahti, J.
AU - Suni, I.
PY - 1989/1/1
Y1 - 1989/1/1
N2 - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.
AB - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.
UR - http://www.scopus.com/inward/record.url?scp=84907834063&partnerID=8YFLogxK
U2 - 10.1007/978-3-642-52314-4_34
DO - 10.1007/978-3-642-52314-4_34
M3 - Conference article in proceedings
AN - SCOPUS:84907834063
SN - 0-387-51000-1
SP - 169
EP - 172
BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
PB - IEEE Institute of Electrical and Electronic Engineers
ER -