GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto; H. P. Kattelus; J. Saarilahti; I. Suni

doi:10.1007/978-3-642-52314-4_34

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto, H. P. Kattelus, J. Saarilahti, I. Suni

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	169-172
Number of pages	4
ISBN (Print)	0-387-51000-1
DOIs	https://doi.org/10.1007/978-3-642-52314-4_34
Publication status	Published - 1 Jan 1989
MoE publication type	A4 Article in a conference publication
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sep 1989 → 14 Sep 1989

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Country	Germany
City	Berlin
Period	11/09/89 → 14/09/89

Access to Document

10.1007/978-3-642-52314-4_34

Link to publication in Scopus

Fingerprint Dive into the research topics of 'GaAs/InAs heterostructures grown by Atomic Layer Epitaxy'. Together they form a unique fingerprint.

Cite this

@inproceedings{f5e85409b1ef4ca4b7e8c923b09eb6ec,

title = "GaAs/InAs heterostructures grown by Atomic Layer Epitaxy",

abstract = "Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.",

author = "J. Ahopelto and Kattelus, {H. P.} and J. Saarilahti and I. Suni",

year = "1989",

month = jan,

day = "1",

doi = "10.1007/978-3-642-52314-4_34",

language = "English",

isbn = "0-387-51000-1",

pages = "169--172",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

}

Ahopelto, J, Kattelus, HP, Saarilahti, J & Suni, I 1989, GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436640, IEEE Institute of Electrical and Electronic Engineers, pp. 169-172, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_34

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. / Ahopelto, J.; Kattelus, H. P.; Saarilahti, J.; Suni, I.

ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers, 1989. p. 169-172 5436640.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

AU - Ahopelto, J.

AU - Kattelus, H. P.

AU - Saarilahti, J.

AU - Suni, I.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

AB - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

UR - http://www.scopus.com/inward/record.url?scp=84907834063&partnerID=8YFLogxK

U2 - 10.1007/978-3-642-52314-4_34

DO - 10.1007/978-3-642-52314-4_34

M3 - Conference article in proceedings

AN - SCOPUS:84907834063

SN - 0-387-51000-1

SP - 169

EP - 172

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -