GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto, H. P. Kattelus, J. Saarilahti, I. Suni

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages169-172
Number of pages4
ISBN (Print)0-387-51000-1
DOIs
Publication statusPublished - 1 Jan 1989
MoE publication typeA4 Article in a conference publication
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: 11 Sep 198914 Sep 1989

Conference

Conference19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period11/09/8914/09/89

Fingerprint

Atomic layer epitaxy
Gallium arsenide
Semiconductor quantum wells
Heterojunctions
Indium arsenide
Gallium
Full width at half maximum
Indium
Crystalline materials

Cite this

Ahopelto, J., Kattelus, H. P., Saarilahti, J., & Suni, I. (1989). GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 169-172). [5436640] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1007/978-3-642-52314-4_34
Ahopelto, J. ; Kattelus, H. P. ; Saarilahti, J. ; Suni, I. / GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1989. pp. 169-172
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Ahopelto, J, Kattelus, HP, Saarilahti, J & Suni, I 1989, GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436640, IEEE Institute of Electrical and Electronic Engineers , pp. 169-172, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_34

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. / Ahopelto, J.; Kattelus, H. P.; Saarilahti, J.; Suni, I.

ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers , 1989. p. 169-172 5436640.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Ahopelto J, Kattelus HP, Saarilahti J, Suni I. GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers . 1989. p. 169-172. 5436640 https://doi.org/10.1007/978-3-642-52314-4_34