GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto; H. P. Kattelus; J. Saarilahti; I. Suni

doi:10.1007/978-3-642-52314-4_34

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

J. Ahopelto, H. P. Kattelus, J. Saarilahti, I. Suni

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	169-172
Number of pages	4
ISBN (Print)	0-387-51000-1
DOIs	https://doi.org/10.1007/978-3-642-52314-4_34
Publication status	Published - 1 Jan 1989
MoE publication type	A4 Article in a conference publication
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sep 1989 → 14 Sep 1989

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Country	Germany
City	Berlin
Period	11/09/89 → 14/09/89

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title = "GaAs/InAs heterostructures grown by Atomic Layer Epitaxy",

abstract = "Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.",

author = "J. Ahopelto and Kattelus, {H. P.} and J. Saarilahti and I. Suni",

year = "1989",

month = jan,

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doi = "10.1007/978-3-642-52314-4_34",

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booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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note = "19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

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Ahopelto, J, Kattelus, HP, Saarilahti, J & Suni, I 1989, GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436640, IEEE Institute of Electrical and Electronic Engineers, pp. 169-172, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_34

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy. / Ahopelto, J.; Kattelus, H. P.; Saarilahti, J.; Suni, I.

ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Institute of Electrical and Electronic Engineers, 1989. p. 169-172 5436640.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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N2 - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

AB - Gallium arsenide layers and gallium arsenide/indium arsenide single quantum wells have been grown by Atomic Layer Epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The RBS/channeling technique gives minimum yields of 4 % for GaAs layers and 15 % for strained InAs layers compared to corresponding random spectra indicating reasonable crystalline quality. This is further confirmed by observation of a PL peak with 12 meV FWHM at 12 K originating from InAs single quantum well.

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T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -

GaAs/InAs heterostructures grown by Atomic Layer Epitaxy

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