Gamma-radiation dosimetry with magnetic Czochralski silicon diode

F. Camargo; J.A.C. Goncalves; H.J. Khoury; Eija Maarit Tuominen; Jaakko Härkönen; C. Bueno

doi:10.1109/NSSMIC.2007.4436428

Gamma-radiation dosimetry with magnetic Czochralski silicon diode

F. Camargo, J.A.C. Goncalves, H.J. Khoury, Eija Maarit Tuominen, Jaakko Härkönen, C. Bueno

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.

Original language	English
Title of host publication	2007 IEEE Nuclear Science Symposium Conference Record
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	696-698
ISBN (Electronic)	978-1-4244-0922-8
DOIs	https://doi.org/10.1109/NSSMIC.2007.4436428
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication

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10.1109/NSSMIC.2007.4436428

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title = "Gamma-radiation dosimetry with magnetic Czochralski silicon diode",

abstract = "This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.",

author = "F. Camargo and J.A.C. Goncalves and H.J. Khoury and Tuominen, {Eija Maarit} and Jaakko H{\"a}rk{\"o}nen and C. Bueno",

year = "2007",

doi = "10.1109/NSSMIC.2007.4436428",

language = "English",

pages = "696--698",

booktitle = "2007 IEEE Nuclear Science Symposium Conference Record",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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Gamma-radiation dosimetry with magnetic Czochralski silicon diode. / Camargo, F.; Goncalves, J.A.C.; Khoury, H.J. et al.
2007 IEEE Nuclear Science Symposium Conference Record . IEEE Institute of Electrical and Electronic Engineers, 2007. p. 696-698.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Gamma-radiation dosimetry with magnetic Czochralski silicon diode

AU - Camargo, F.

AU - Goncalves, J.A.C.

AU - Khoury, H.J.

AU - Tuominen, Eija Maarit

AU - Härkönen, Jaakko

AU - Bueno, C.

PY - 2007

Y1 - 2007

N2 - This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.

AB - This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.

U2 - 10.1109/NSSMIC.2007.4436428

DO - 10.1109/NSSMIC.2007.4436428

M3 - Conference article in proceedings

SP - 696

EP - 698

BT - 2007 IEEE Nuclear Science Symposium Conference Record

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Gamma-radiation dosimetry with magnetic Czochralski silicon diode

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