Gas sensor using anodic Tio2 thin film for monitoring hydrogen

J. Moon; M. Kemell; J. Kukkola; R. Punkkinen; H. P. Hedman; Arho Suominen; E. Mäkilä; M. Tenho; A. Tuominen; H. Kim

doi:10.1016/j.proeng.2012.09.266

Gas sensor using anodic Tio2 thin film for monitoring hydrogen

J. Moon^*, M. Kemell, J. Kukkola, R. Punkkinen, H. P. Hedman, Arho Suominen, E. Mäkilä, M. Tenho, A. Tuominen, H. Kim

^*Corresponding author for this work

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Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

16 Citations (Scopus)

Abstract

We report a gas sensor using an anodic TiO₂ thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450 °C for crystallization. Two Pt electrodes were formed on TiO₂ film. The electrical behavior during anodization was measured. The material properties of TiO₂ film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000 ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H₂ at 200 °C.

Original language	English
Pages (from-to)	791-794
Number of pages	4
Journal	Procedia Engineering
Volume	47
DOIs	https://doi.org/10.1016/j.proeng.2012.09.266
Publication status	Published - 1 Jan 2012
MoE publication type	A4 Article in a conference publication
Event	26th European Conference on Solid-State Transducers, EUROSENSOR 2012 - Krakow, Poland Duration: 9 Sept 2012 → 12 Sept 2012

Keywords

Anodization
Hydrogen
Thin film
Titanium dioxide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.proeng.2012.09.266

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title = "Gas sensor using anodic Tio2 thin film for monitoring hydrogen",

abstract = "We report a gas sensor using an anodic TiO2 thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450 °C for crystallization. Two Pt electrodes were formed on TiO2 film. The electrical behavior during anodization was measured. The material properties of TiO2 film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000 ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H2 at 200 °C.",

keywords = "Anodization, Hydrogen, Thin film, Titanium dioxide",

author = "J. Moon and M. Kemell and J. Kukkola and R. Punkkinen and Hedman, {H. P.} and Arho Suominen and E. M{\"a}kil{\"a} and M. Tenho and A. Tuominen and H. Kim",

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doi = "10.1016/j.proeng.2012.09.266",

language = "English",

volume = "47",

pages = "791--794",

journal = "Procedia Engineering",

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TY - JOUR

T1 - Gas sensor using anodic Tio2 thin film for monitoring hydrogen

AU - Moon, J.

AU - Kemell, M.

AU - Kukkola, J.

AU - Punkkinen, R.

AU - Hedman, H. P.

AU - Suominen, Arho

AU - Mäkilä, E.

AU - Tenho, M.

AU - Tuominen, A.

AU - Kim, H.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We report a gas sensor using an anodic TiO2 thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450 °C for crystallization. Two Pt electrodes were formed on TiO2 film. The electrical behavior during anodization was measured. The material properties of TiO2 film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000 ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H2 at 200 °C.

AB - We report a gas sensor using an anodic TiO2 thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450 °C for crystallization. Two Pt electrodes were formed on TiO2 film. The electrical behavior during anodization was measured. The material properties of TiO2 film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000 ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H2 at 200 °C.

KW - Anodization

KW - Hydrogen

KW - Thin film

KW - Titanium dioxide

UR - http://www.scopus.com/inward/record.url?scp=84877057206&partnerID=8YFLogxK

U2 - 10.1016/j.proeng.2012.09.266

DO - 10.1016/j.proeng.2012.09.266

M3 - Article in a proceedings journal

AN - SCOPUS:84877057206

SN - 1877-7058

VL - 47

SP - 791

EP - 794

JO - Procedia Engineering

JF - Procedia Engineering

T2 - 26th European Conference on Solid-State Transducers, EUROSENSOR 2012

Y2 - 9 September 2012 through 12 September 2012

ER -

Gas sensor using anodic Tio2 thin film for monitoring hydrogen

Abstract

Keywords

UN SDGs

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