Gas sensor using anodic Tio2 thin film for monitoring hydrogen

J. Moon, M. Kemell, J. Kukkola, R. Punkkinen, H. P. Hedman, Arho Suominen, E. Mäkilä, M. Tenho, A. Tuominen, H. Kim

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

14 Citations (Scopus)

Abstract

We report a gas sensor using an anodic TiO2 thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450 °C for crystallization. Two Pt electrodes were formed on TiO2 film. The electrical behavior during anodization was measured. The material properties of TiO2 film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000 ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H2 at 200 °C.

Original languageEnglish
Pages (from-to)791-794
Number of pages4
JournalProcedia Engineering
Volume47
DOIs
Publication statusPublished - 1 Jan 2012
MoE publication typeA4 Article in a conference publication
Event26th European Conference on Solid-State Transducers, EUROSENSOR 2012 - Krakow, Poland
Duration: 9 Sep 201212 Sep 2012

    Fingerprint

Keywords

  • Anodization
  • Hydrogen
  • Thin film
  • Titanium dioxide

Cite this

Moon, J., Kemell, M., Kukkola, J., Punkkinen, R., Hedman, H. P., Suominen, A., Mäkilä, E., Tenho, M., Tuominen, A., & Kim, H. (2012). Gas sensor using anodic Tio2 thin film for monitoring hydrogen. Procedia Engineering, 47, 791-794. https://doi.org/10.1016/j.proeng.2012.09.266