Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors

Mika Prunnila (Corresponding Author), Jouni Ahopelto, Kimmo Henttinen, F. Gamiz

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

We report on detailed room-temperature transport properties of a 17nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum mobility occurs when the electron gas symmetrically occupies the whole SOI slab. The observed mobility behavior is the fingerprint of volume inversion∕accumulation. This gate bias symmetry dependency of the mobility suggests that DGSOI devices intrinsically can be operated in a velocity modulation transistor (VMT) mode. In the experimental gate bias window, the maximum velocity∕mobility modulation is ∼40%. The VMT transconductance exceeds conventional single-gate transconductance when electron density is above ∼5.3×1016m−2. Improvements of the observed VMT operation in thin DGSOI devices are discussed.
Original languageEnglish
Pages (from-to)5442 - 5444
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number22
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

velocity modulation
electron mobility
transistors
insulators
symmetry
silicon
transconductance
electron gas
slabs
transport properties
modulation

Keywords

  • MOSFET
  • silicon-on-insulator
  • SOI
  • electron mobility
  • electron density
  • electron gas

Cite this

@article{f948ab8fb06446f0ad373372954de3ed,
title = "Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors",
abstract = "We report on detailed room-temperature transport properties of a 17nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum mobility occurs when the electron gas symmetrically occupies the whole SOI slab. The observed mobility behavior is the fingerprint of volume inversion∕accumulation. This gate bias symmetry dependency of the mobility suggests that DGSOI devices intrinsically can be operated in a velocity modulation transistor (VMT) mode. In the experimental gate bias window, the maximum velocity∕mobility modulation is ∼40{\%}. The VMT transconductance exceeds conventional single-gate transconductance when electron density is above ∼5.3×1016m−2. Improvements of the observed VMT operation in thin DGSOI devices are discussed.",
keywords = "MOSFET, silicon-on-insulator, SOI, electron mobility, electron density, electron gas",
author = "Mika Prunnila and Jouni Ahopelto and Kimmo Henttinen and F. Gamiz",
year = "2004",
doi = "10.1063/1.1829384",
language = "English",
volume = "85",
pages = "5442 -- 5444",
journal = "Applied Physics Letters",
issn = "0003-6951",
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}

Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Henttinen, Kimmo; Gamiz, F.

In: Applied Physics Letters, Vol. 85, No. 22, 2004, p. 5442 - 5444.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Henttinen, Kimmo

AU - Gamiz, F.

PY - 2004

Y1 - 2004

N2 - We report on detailed room-temperature transport properties of a 17nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum mobility occurs when the electron gas symmetrically occupies the whole SOI slab. The observed mobility behavior is the fingerprint of volume inversion∕accumulation. This gate bias symmetry dependency of the mobility suggests that DGSOI devices intrinsically can be operated in a velocity modulation transistor (VMT) mode. In the experimental gate bias window, the maximum velocity∕mobility modulation is ∼40%. The VMT transconductance exceeds conventional single-gate transconductance when electron density is above ∼5.3×1016m−2. Improvements of the observed VMT operation in thin DGSOI devices are discussed.

AB - We report on detailed room-temperature transport properties of a 17nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum mobility occurs when the electron gas symmetrically occupies the whole SOI slab. The observed mobility behavior is the fingerprint of volume inversion∕accumulation. This gate bias symmetry dependency of the mobility suggests that DGSOI devices intrinsically can be operated in a velocity modulation transistor (VMT) mode. In the experimental gate bias window, the maximum velocity∕mobility modulation is ∼40%. The VMT transconductance exceeds conventional single-gate transconductance when electron density is above ∼5.3×1016m−2. Improvements of the observed VMT operation in thin DGSOI devices are discussed.

KW - MOSFET

KW - silicon-on-insulator

KW - SOI

KW - electron mobility

KW - electron density

KW - electron gas

U2 - 10.1063/1.1829384

DO - 10.1063/1.1829384

M3 - Article

VL - 85

SP - 5442

EP - 5444

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -