Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin; B. Bertrand; E. Chanrion; Heorhii Bohuslavskyi; F. Ansaloni; T.-Y. Yang; J. Michniewicz; D. J. Niegemann; C. Spence; T. Lundberg; A. Chatterjee; A. Crippa; J. Li; R. Maurand; X. Jehl; M. Sanquer; M. F. Gonzalez-Zalba; F. Kuemmeth; Y.-M. Niquet; S. De Franceschi; M. Urdampilleta; T. Meunier; M. Vinet

doi:10.1109/iedm19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion, Heorhii Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, S. De FranceschiM. Urdampilleta, T. Meunier, M. Vinet

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

16 Citations (Scopus)

Abstract

We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)	978-1-7281-4032-2
DOIs	https://doi.org/10.1109/iedm19573.2019.8993580
Publication status	Published - Dec 2019
MoE publication type	A4 Article in a conference publication

Funding

ACKNOWLEDGMENT This work was supported in part by the EU through H2020 MOS-QUITO and ERC Synergy QuCube projects, and in part by the French Public Authorities through ANR CMOSQSPIN and CODAQ projects.

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10.1109/iedm19573.2019.8993580

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Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T.-Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y.-M., ... Vinet, M. (2019). Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993580 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/iedm19573.2019.8993580

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title = "Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays",

abstract = "We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.",

author = "L. Hutin and B. Bertrand and E. Chanrion and Heorhii Bohuslavskyi and F. Ansaloni and T.-Y. Yang and J. Michniewicz and Niegemann, {D. J.} and C. Spence and T. Lundberg and A. Chatterjee and A. Crippa and J. Li and R. Maurand and X. Jehl and M. Sanquer and Gonzalez-Zalba, {M. F.} and F. Kuemmeth and Y.-M. Niquet and Franceschi, {S. De} and M. Urdampilleta and T. Meunier and M. Vinet",

year = "2019",

month = dec,

doi = "10.1109/iedm19573.2019.8993580",

language = "English",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Hutin, L, Bertrand, B, Chanrion, E, Bohuslavskyi, H, Ansaloni, F, Yang, T-Y, Michniewicz, J, Niegemann, DJ, Spence, C, Lundberg, T, Chatterjee, A, Crippa, A, Li, J, Maurand, R, Jehl, X, Sanquer, M, Gonzalez-Zalba, MF, Kuemmeth, F, Niquet, Y-M, Franceschi, SD, Urdampilleta, M, Meunier, T & Vinet, M 2019, Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993580, IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/iedm19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. / Hutin, L.; Bertrand, B.; Chanrion, E. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE Institute of Electrical and Electronic Engineers, 2019. 8993580.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

AU - Hutin, L.

AU - Bertrand, B.

AU - Chanrion, E.

AU - Bohuslavskyi, Heorhii

AU - Ansaloni, F.

AU - Yang, T.-Y.

AU - Michniewicz, J.

AU - Niegemann, D. J.

AU - Spence, C.

AU - Lundberg, T.

AU - Chatterjee, A.

AU - Crippa, A.

AU - Li, J.

AU - Maurand, R.

AU - Jehl, X.

AU - Sanquer, M.

AU - Gonzalez-Zalba, M. F.

AU - Kuemmeth, F.

AU - Niquet, Y.-M.

AU - Franceschi, S. De

AU - Urdampilleta, M.

AU - Meunier, T.

AU - Vinet, M.

PY - 2019/12

Y1 - 2019/12

N2 - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

AB - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

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U2 - 10.1109/iedm19573.2019.8993580

DO - 10.1109/iedm19573.2019.8993580

M3 - Conference article in proceedings

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

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