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Gate tunable coupling of epsilon-near-zero and plasmonic modes

  • Dipa Ghindani
  • , Alireza R. Rashed
  • , Mohsin Habib
  • , Humeyra Caglayan*
  • *Corresponding author for this work
  • Tampere University

Research output: Contribution to journalArticleScientificpeer-review

Abstract

In this work, an active tuning of the coupling strength in a strongly coupled system comprised of a thin epsilon-near-zero material and gold nanorods as plasmonic resonators is demonstrated. A novel gating scheme is developed where an ionic liquid is employed to bias the coupled system and tune the coupling in transmission mode. A significant tuning of the coupled resonance up to 30 nm is observed by changing the bias voltages from 0 to 4.5 V. This control mechanism on strong coupling opens exciting opportunities for various disruptive applications by offering advanced control and tunability on strongly coupled systems.
Original languageEnglish
Article number2100800
Number of pages5
JournalAdvanced Optical Materials
Volume9
Issue number22
DOIs
Publication statusPublished - 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • epsilon-near-zero materials
  • epsilon-near-zero mode
  • gating
  • indium tin oxide
  • plasmonic mode
  • strong coupling

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