Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

I. Angervo; M. Saloaro; H. Palonen; H. Huhtinen; P. Paturi; Tapio Mäkelä; Sayani Majumdar

doi:10.1016/j.apsusc.2022.152854

Giant magnetoresistance response in Sr₂FeMoO₆ based organic spin valves

I. Angervo^* (Corresponding Author), M. Saloaro, H. Palonen, H. Huhtinen, P. Paturi, Tapio Mäkelä, Sayani Majumdar

^*Corresponding author for this work

University of Turku

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

We report the fabrication of the first Sr₂FeMoO₆ based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq₃) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr₂FeMoO₆, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

Original language	English
Article number	152854
Journal	Applied Surface Science
Volume	589
DOIs	https://doi.org/10.1016/j.apsusc.2022.152854
Publication status	Published - 1 Jul 2022
MoE publication type	A1 Journal article-refereed

Keywords

Alq
Magnetoresistance
Spin valve
SrFeMoO

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10.1016/j.apsusc.2022.152854Licence: CC BY

Cite this

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title = "Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves",

abstract = "We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.",

keywords = "Alq, Magnetoresistance, Spin valve, SrFeMoO",

author = "I. Angervo and M. Saloaro and H. Palonen and H. Huhtinen and P. Paturi and Tapio M{\"a}kel{\"a} and Sayani Majumdar",

note = "Funding Information: Jenny & Antti Wihuri foundation and Turku University foundation are acknowledged for financial support. We thank M. Sc Asko Sneck for his assistance in Alq layer thickness measurements. S. Majumdar acknowledges the Academy of Finland (Project 13293916) for financial support. Publisher Copyright: {\textcopyright} 2022 The Authors",

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doi = "10.1016/j.apsusc.2022.152854",

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T1 - Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

AU - Angervo, I.

AU - Saloaro, M.

AU - Palonen, H.

AU - Huhtinen, H.

AU - Paturi, P.

AU - Mäkelä, Tapio

AU - Majumdar, Sayani

N1 - Funding Information: Jenny & Antti Wihuri foundation and Turku University foundation are acknowledged for financial support. We thank M. Sc Asko Sneck for his assistance in Alq layer thickness measurements. S. Majumdar acknowledges the Academy of Finland (Project 13293916) for financial support. Publisher Copyright: © 2022 The Authors

PY - 2022/7/1

Y1 - 2022/7/1

N2 - We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

AB - We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

KW - Alq

KW - Magnetoresistance

KW - Spin valve

KW - SrFeMoO

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DO - 10.1016/j.apsusc.2022.152854

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VL - 589

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 152854

ER -

Giant magnetoresistance response in Sr₂FeMoO₆ based organic spin valves

Abstract

Keywords

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