Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

I. Angervo (Corresponding Author), M. Saloaro, H. Palonen, H. Huhtinen, P. Paturi, Tapio Mäkelä, Sayani Majumdar

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)


We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

Original languageEnglish
Article number152854
JournalApplied Surface Science
Publication statusPublished - 1 Jul 2022
MoE publication typeA1 Journal article-refereed


  • Alq
  • Magnetoresistance
  • Spin valve
  • SrFeMoO


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