Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

I. Angervo; M. Saloaro; H. Palonen; H. Huhtinen; P. Paturi; Tapio Mäkelä; Sayani Majumdar

doi:10.1016/j.apsusc.2022.152854

Giant magnetoresistance response in Sr₂FeMoO₆ based organic spin valves

I. Angervo^*
, M. Saloaro
, H. Palonen
, H. Huhtinen
, P. Paturi
, Tapio Mäkelä
, Sayani Majumdar

^*Corresponding author for this work

University of Turku

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (Scopus)

Abstract

We report the fabrication of the first Sr₂FeMoO₆ based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq₃) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr₂FeMoO₆, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

Original language	English
Article number	152854
Journal	Applied Surface Science
Volume	589
DOIs	https://doi.org/10.1016/j.apsusc.2022.152854
Publication status	Published - 1 Jul 2022
MoE publication type	A1 Journal article-refereed

Funding

Jenny & Antti Wihuri foundation and Turku University foundation are acknowledged for financial support. S. Majumdar acknowledges the Academy of Finland (Project 13293916) for financial support.

Keywords

Alq
Magnetoresistance
Spin valve
SrFeMoO

Access to Document

10.1016/j.apsusc.2022.152854Licence: CC BY

Cite this

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title = "Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves",

abstract = "We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20\%–30\% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.",

keywords = "Alq, Magnetoresistance, Spin valve, SrFeMoO",

author = "I. Angervo and M. Saloaro and H. Palonen and H. Huhtinen and P. Paturi and Tapio M{\"a}kel{\"a} and Sayani Majumdar",

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T1 - Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

AU - Angervo, I.

AU - Saloaro, M.

AU - Palonen, H.

AU - Huhtinen, H.

AU - Paturi, P.

AU - Mäkelä, Tapio

AU - Majumdar, Sayani

PY - 2022/7/1

Y1 - 2022/7/1

N2 - We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

AB - We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

KW - Alq

KW - Magnetoresistance

KW - Spin valve

KW - SrFeMoO

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DO - 10.1016/j.apsusc.2022.152854

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