Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy

Growth and characterization

Jari Keskinen, H. Asonen, M. Hovinen, Kirsi Tappura, J. Näppi, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.
Original languageEnglish
Pages (from-to)239-242
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number2
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Gas source molecular beam epitaxy
Lasers
Epitaxial growth
Diffraction
Threshold current density
Ridge waveguides
Semiconductor quantum wells
Wavelength

Cite this

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title = "Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy: Growth and characterization",
abstract = "We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.",
author = "Jari Keskinen and H. Asonen and M. Hovinen and Kirsi Tappura and J. N{\"a}ppi and Markus Pessa",
year = "1991",
language = "English",
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pages = "239--242",
journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
issn = "2166-2746",
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Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy : Growth and characterization. / Keskinen, Jari; Asonen, H.; Hovinen, M.; Tappura, Kirsi; Näppi, J.; Pessa, Markus.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 2, 1991, p. 239-242.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy

T2 - Growth and characterization

AU - Keskinen, Jari

AU - Asonen, H.

AU - Hovinen, M.

AU - Tappura, Kirsi

AU - Näppi, J.

AU - Pessa, Markus

PY - 1991

Y1 - 1991

N2 - We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.

AB - We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.

M3 - Article

VL - 9

SP - 239

EP - 242

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 2

ER -