Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy: Growth and characterization

Jari Keskinen, H. Asonen, M. Hovinen, Kirsi Tappura, J. Näppi, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.
Original languageEnglish
Pages (from-to)239-242
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number2
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy: Growth and characterization'. Together they form a unique fingerprint.

Cite this