Abstract
We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.
| Original language | English |
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| Pages (from-to) | 239-242 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 9 |
| Issue number | 2 |
| Publication status | Published - 1991 |
| MoE publication type | A1 Journal article-refereed |