We have grown graded‐index strained multiquantum‐well GaInAsP lasers by gas‐source molecular‐beam epitaxy (GSMBE) for a wavelength of 1.47 μm. The growth of graded layers and quantum wells by GSMBE is reported. X‐ray diffraction measurements of the laser structure were made and a simulation by dynamical diffraction theory gave good fitting. The threshold current densities were measured for 400‐ and 1000‐μm‐long broad‐area lasers, and they were 1350 and 780 A/cm2, respectively. We have also fabricated ridge waveguide lasers from the same sample.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1991|
|MoE publication type||A1 Journal article-refereed|
Keskinen, J., Asonen, H., Hovinen, M., Tappura, K., Näppi, J., & Pessa, M. (1991). Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy: Growth and characterization. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 9(2), 239-242. https://doi.org/10.1116/1.585600